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The AOI380A60C is a surface-mount N-channel power MOSFET from Alpha & Omega Semiconductor, utilizing proprietary aMOS5 technology. It features a drain-source voltage of 600V and a maximum junction-to-case thermal resistance of 1°C/W. The device supports a continuous drain current of 11A and a pulsed current of 44A. Key electrical parameters include a maximum on-resistance of 0.38Ω at 10V gate drive and a total gate charge of 18nC. It operates within a temperature range of -55°C to 150°C.
Verify the specific package type required for your PCB layout, as the AOI380A60C corresponds to the TO-251A (IPAK) form factor. Confirm that the manufacturer's datasheet revision matches your design specifications, particularly regarding thermal resistance values and absolute maximum ratings. Ensure compliance with export control regulations and verify suitability for intended operating temperatures before finalizing procurement.
Select this component when a surface-mount solution is preferred over through-hole alternatives like the AOT series. The TO-251A package offers distinct thermal and mechanical properties compared to the standard TO-252. Consider the 1°C/W junction-to-case thermal resistance for heatsinking calculations. Evaluate the 18nC gate charge against driver capabilities to ensure adequate switching speed without excessive drive current requirements.
This part belongs to the aMOS5™ family of N-channel power transistors designed for high-efficiency power conversion. It shares core electrical characteristics with the AOD380A60C but differs in physical packaging. The AOI variant utilizes the TO-251A footprint, providing an alternative mounting option for designers requiring specific board space or mechanical constraints compared to the more common DPAK style.
The AOD380A60C serves as a direct functional equivalent with identical electrical specifications but utilizes a TO-252 package. Verify PCB footprint compatibility before substitution, as the pinout and physical dimensions differ between TO-251A and TO-252 packages.