AOI418

Description：MOSFET N-CH 30V 13.5A/36A TO251A
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tube

SKU:7ea11d67089b Category: Single FETs, MOSFETs Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 13.5A/36A TO251A
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：13.5A (Ta), 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：24 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1380 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：2.5W (Ta), 50W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-251A
Package / Case：TO-251-3 Stub Leads, IPAK

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AOI418

Overview

The AOI418 is a P-channel enhancement mode field effect transistor manufactured by Alpha & Omega Semiconductor. It utilizes advanced trench technology to achieve low gate charge and excellent on-resistance characteristics. The device is designed for high current load applications, leveraging the thermal efficiency of its TO-252 (DPAK) surface-mount package. Key electrical parameters include a drain-source voltage rating of 40V and a continuous drain current capacity of 40A at case temperature.

Feature Summary

Advanced trench technology provides low gate charge and enhanced on-resistance performance.
Optimized thermal resistance in the DPAK package supports high current load switching applications.

Applications

High current load switching
Power management circuits requiring P-channel control

Procurement Notes

Verify the specific suffix letter (e.g., L) against the datasheet to confirm exact electrical tolerances and packaging variations. Confirm RoHS compliance status and ensure the supplier provides official manufacturer documentation for quality assurance prior to procurement.

Selection Notes

Select this component for designs requiring a 40V P-channel MOSFET with robust thermal handling capabilities. Evaluate the required gate drive voltage against the specified threshold and on-resistance curves to ensure efficient switching performance within the target circuit constraints.

Part Context

This part belongs to the AOD/AOI418 series from Alpha & Omega Semiconductor, which focuses on power MOSFETs utilizing trench technology. The series is engineered for applications demanding high efficiency and reliable switching in compact surface-mount packages like the TO-252.