AOI442

$0.30

Description：MOSFET N-CH 60V 7A/37A TO251A
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tube

SKU:420c2f0360ec Category: Single FETs, MOSFETs Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 7A/37A TO251A
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：7A (Ta), 37A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：20mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：68 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2300 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：2.1W (Ta), 60W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-251A
Package / Case：TO-251-3 Stub Leads, IPAK

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AOI442

Overview

The AOI442 is a 60V N-Channel Enhancement Mode Field Effect Transistor manufactured by Alpha & Omega Semiconductor Inc. It utilizes advanced trench technology to achieve low on-resistance and gate charge, making it suitable for load switch and PWM applications. The device is housed in a TO-252 (DPAK) package. Key electrical parameters include a drain-source breakdown voltage of 60V, a continuous drain current of 37A at VGS=10V, and a maximum on-resistance of less than 20mΩ at VGS=10V and 25mΩ at VGS=4.5V.

Feature Summary

Advanced trench technology provides excellent on-resistance and low gate charge characteristics.
Capable of handling unclamped inductive switching events with 100% UIS testing verification.
Features optimized body diode reverse recovery performance for efficient switching.

Applications

Load switch circuits
Pulse Width Modulation (PWM) applications

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging and environmental compliance specifications. Confirm that the component meets RoHS standards if required by your design constraints. Cross-reference the datasheet revision date to ensure alignment with the latest thermal and electrical characteristic updates provided by Alpha & Omega Semiconductor.

Selection Notes

Select this component for designs requiring a 60V N-channel MOSFET with high current capability in a surface-mount DPAK package. Consider the thermal resistance values when designing heat dissipation strategies, as power dissipation limits are dependent on the case temperature and board copper area. Ensure the gate drive voltage supports the specified RDS(ON) thresholds for optimal efficiency.

Part Context

The AOI442 belongs to the AOD442/AOI442 family of 60V N-Channel MOSFETs from Alpha & Omega Semiconductor. These devices are engineered for general-purpose power switching applications where low conduction losses and fast switching speeds are critical. The 'I' suffix typically denotes a specific tape and reel packaging option compared to the standard bulk or alternative packaging of the base AOD442 model.

Replacement Considerations

Direct substitutes must match the 60V rating, N-channel configuration, and TO-252 package. Verify pinout compatibility and ensure equivalent or superior RDS(ON) and Qg specifications. Check for identical thermal impedance characteristics to maintain existing cooling solutions without modification.

FAQ

Is the AOI442 tested for avalanche energy?

Yes, the datasheet specifies that the device undergoes 100% Unclamped Inductive Switching (UIS) testing to verify its ruggedness and avalanche capability.