AOI450A70

Overview

The AOI450A70 is a 700V N-Channel Power Transistor utilizing aMOS5 technology. It features a maximum drain-source voltage of 800V and a pulsed drain current of 44A. The device has a typical on-resistance of 0.405Ω at VGS=10V. Key dynamic parameters include a total gate charge of 20nC, input capacitance of 1115pF, and reverse recovery time of 275ns. The component operates within a junction temperature range of -55°C to 150°C.

Feature Summary

• Utilizes aMOS5 trench technology for enhanced performance
• Provides high breakdown voltage capability up to 800V
• Features low gate charge for efficient switching
• Includes robust body diode characteristics

Applications

• PFC stages in adapters
• PWM stages including Flyback converters
• LLC resonant converters
• Server power supplies
• Gaming power supplies

Procurement Notes

Verify the specific package variant required during ordering. The AOI450A70 corresponds to the TO-251A (IPAK) through-hole package. Confirm that the application environment supports the specified thermal resistance values and that the customer evaluates suitability for intended uses as per manufacturer terms.

Selection Notes

Select this component for high-voltage applications requiring moderate current handling. Consider the 0.405Ω on-resistance for conduction loss calculations. Ensure the driving circuit can supply sufficient gate charge. Evaluate thermal management requirements based on the junction-to-case thermal impedance provided in the datasheet.

Part Context

This part belongs to the Alpha & Omega Semiconductor aMOS5 family of N-channel power transistors. It is designed for general-purpose power switching applications. The AOI450A70 is the through-hole version, while the AOD450A70 is the surface-mount equivalent in a TO-252 package.

Replacement Considerations

The AOD450A70 is the direct surface-mount alternative with identical electrical specifications but housed in a TO-252 package.