AOI468

$0.49

Description：MOSFET N CH 300V 11.5A TO252
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tube

SKU:fbbf602cbecf Category: Single FETs, MOSFETs Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

AOI468 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is MOSFET N CH 300V 11.5A TO252. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AOI468

Description：MOSFET N CH 300V 11.5A TO252
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：300 V
Current - Continuous Drain (Id) @ 25°C：11.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：420mOhm @ 6A, 10V
Vgs(th) (Max) @ Id：4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：16 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：790 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：150W (Tc)
Operating Temperature：-50°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-251A
Package / Case：TO-251-3 Stub Leads, IPAK

Single FETs, MOSFETs datasheet and documents for AOI468

AOI468

Single FETs, MOSFETs Overview

The AOI468 is a 300V N-Channel MOSFET fabricated using an advanced high voltage process. It features a maximum continuous drain current of 11.5A at VGS=10V and a typical on-resistance (RDS(ON)) of 0.31Ω at VGS=10V, with a maximum of 0.42Ω. The device supports a pulsed drain current of 29A and has a gate threshold voltage ranging from 3.4V to 4.5V. Key dynamic parameters include a total gate charge of 12.8nC typical and input capacitance of 632pF typical. It operates within a junction temperature range of -50°C to 175°C.

Single FETs, MOSFETs Feature Summary

Guaranteed avalanche capability with 100% UIS testing for robustness in offline power supply designs.
Advanced high voltage MOSFET process delivers low RDS(on) and reduced Ciss/Crss for improved efficiency.
High peak diode recovery dv/dt rating suitable for demanding switching applications.

Single FETs, MOSFETs Applications

Boost converters
Synchronous rectifiers
Consumer power supplies
Telecom power supplies
Industrial power supplies
LED backlighting

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix or package variant required, as datasheets often list multiple part numbers (e.g., AOD468 vs AOI468) which may differ in packaging or thermal characteristics. Confirm RoHS compliance status and lead time availability directly with Alpha & Omega Semiconductor or authorized distributors, as stock levels fluctuate. Ensure the selected component meets the specific thermal management requirements for the target application environment.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring 300V blocking capability and moderate current handling up to 11.5A. Consider the thermal resistance values (RθJA and RθJC) when designing heatsinking solutions. Verify that the gate drive voltage can reliably exceed the 4.5V maximum threshold to ensure full enhancement. Evaluate the single-pulse avalanche energy limits if the circuit is prone to inductive load switching transients.

Single FETs, MOSFETs Part Context

The AOI468 belongs to the AOS high-voltage MOSFET family designed for AC-DC conversion. It shares design similarities with the AOD468 but typically differs in packaging or specific thermal ratings. These devices are engineered to replace older generation MOSFETs in offline power supplies, offering better performance through lower on-resistance and optimized capacitive characteristics for faster switching speeds.

Single FETs, MOSFETs Replacement Considerations

Check pinout compatibility with existing TO-252 or TO-251A footprints. Compare RDS(ON) and Qg values against current components to ensure equivalent or improved efficiency. Verify that the replacement part's breakdown voltage and current ratings meet or exceed the original design specifications.