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AOI4C60 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is MOSFET N-CH 600V 4A TO251A. Review the specifications below when checking this part for your BOM.
The AOI4C60 is a surface-mount N-channel MOSFET in the TO-251A (IPAK) package. It features a drain-source voltage of 600V and a continuous drain current of 4A at 25°C case temperature. The maximum on-resistance is 0.95Ω at VGS=10V and ID=1.3A. Key dynamic parameters include a typical gate charge of 14nC, input capacitance of 910pF, and reverse recovery time of 295ns. Thermal resistance from junction to case is 1°C/W, with an operating junction temperature range of -50°C to 150°C.
Verify the specific suffix 'I' corresponds to the TO-251A IPAK package configuration rather than the standard DPAK variant. Confirm RoHS compliance status and consumer market qualification requirements before integration into final assemblies.
Select this component for designs requiring a compact surface-mount solution with verified avalanche energy handling. Ensure thermal management accounts for the 1°C/W junction-to-case resistance when calculating power dissipation limits under continuous load conditions.
This device belongs to the AOD/AOI4C60 series manufactured by Alpha & Omega Semiconductor. It utilizes an advanced high-voltage process optimized for offline power supplies. The AOI4C60 specifically denotes the TO-251A IPAK package variant within this family.
The AOD4C60 serves as the direct pin-compatible alternative utilizing the TO-252 DPAK package. Verify package dimensions and thermal pad configurations differ between the IPAK and DPAK variants during substitution.
Yes, the datasheet confirms 100% UIS testing and guarantees repetitive and single pulsed avalanche energy capabilities.
The absolute maximum rating for gate-source voltage is ±30V.
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