Single FETs, MOSFETs AOI4C60 product image

AOI4C60

$0.38
  • Description:MOSFET N-CH 600V 4A TO251A
  • Series:-
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tube

SKU:59bbc9cb9c95 Category: Brand:

  
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AOI4C60 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is MOSFET N-CH 600V 4A TO251A. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AOI4C60

  • Description:MOSFET N-CH 600V 4A TO251A
  • Series:-
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):600 V
  • Current - Continuous Drain (Id) @ 25°C:4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:950mOhm @ 1.3A, 10V
  • Vgs(th) (Max) @ Id:5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:18 nC @ 10 V
  • Vgs (Max):±30V
  • Input Capacitance (Ciss) (Max) @ Vds:910 pF @ 100 V
  • FET Feature:-
  • Power Dissipation (Max):125W (Tc)
  • Operating Temperature:-50°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-251A
  • Package / Case:TO-251-3 Stub Leads, IPAK

Single FETs, MOSFETs datasheet and documents for AOI4C60

AOI4C60

Single FETs, MOSFETs Overview

The AOI4C60 is a surface-mount N-channel MOSFET in the TO-251A (IPAK) package. It features a drain-source voltage of 600V and a continuous drain current of 4A at 25°C case temperature. The maximum on-resistance is 0.95Ω at VGS=10V and ID=1.3A. Key dynamic parameters include a typical gate charge of 14nC, input capacitance of 910pF, and reverse recovery time of 295ns. Thermal resistance from junction to case is 1°C/W, with an operating junction temperature range of -50°C to 150°C.

Single FETs, MOSFETs Feature Summary

  • Advanced high-voltage MOSFET process designed for robust performance in AC-DC applications.
  • Guaranteed avalanche capability with 100% UIS testing for improved reliability.
  • Optimized low RDS(on), Ciss, and Crss characteristics for efficient switching.
  • High dv/dt ruggedness and peak diode recovery dv/dt ratings.

Single FETs, MOSFETs Applications

  • Offline power supply designs
  • AC-DC converter circuits
  • General purpose switching applications

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'I' corresponds to the TO-251A IPAK package configuration rather than the standard DPAK variant. Confirm RoHS compliance status and consumer market qualification requirements before integration into final assemblies.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring a compact surface-mount solution with verified avalanche energy handling. Ensure thermal management accounts for the 1°C/W junction-to-case resistance when calculating power dissipation limits under continuous load conditions.

Single FETs, MOSFETs Part Context

This device belongs to the AOD/AOI4C60 series manufactured by Alpha & Omega Semiconductor. It utilizes an advanced high-voltage process optimized for offline power supplies. The AOI4C60 specifically denotes the TO-251A IPAK package variant within this family.

Single FETs, MOSFETs Replacement Considerations

The AOD4C60 serves as the direct pin-compatible alternative utilizing the TO-252 DPAK package. Verify package dimensions and thermal pad configurations differ between the IPAK and DPAK variants during substitution.

Single FETs, MOSFETs FAQ

Is the AOI4C60 qualified for unclamped inductive switching?

Yes, the datasheet confirms 100% UIS testing and guarantees repetitive and single pulsed avalanche energy capabilities.

What is the maximum gate-source voltage rating?

The absolute maximum rating for gate-source voltage is ±30V.

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