AOI510

Q: What is the maximum gate-source voltage allowed?

The absolute maximum gate-source voltage is ±20V.

Q: Is the device tested for unclamped inductive switching?

Yes, the datasheet confirms 100% UIS testing has been performed.

Q: What is the typical total gate charge at 10V?

The typical total gate charge (Qg) at VGS=10V is 44nC, with a maximum of 60nC.

Description：MOSFET N-CH 30V 45A/70A TO251A
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR)

SKU:05c75a65cd9b Category: Single FETs, MOSFETs Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 45A/70A TO251A
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：45A (Ta), 70A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：2.6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：60 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2719 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：7.5W (Ta), 60W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-251A
Package / Case：TO-251-3 Stub Leads, IPAK

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AOI510

Overview

The AOI510 is a 30V N-Channel AlphaMOS power transistor designed for high-efficiency switching applications. It features an on-resistance of less than 2.6mΩ at VGS=10V and less than 4mΩ at VGS=4.5V, ensuring low conduction losses. The device supports a continuous drain current of 70A at TA=25°C and withstands a gate-source voltage of ±20V. With a maximum junction temperature range of -55°C to 175°C and 100% UIS testing, it provides robust performance in demanding environments.

Feature Summary

Utilizes latest Trench Power AlphaMOS (αMOS LV) technology for optimized efficiency.
Delivers very low RDS(on) specifically at 4.5V gate-source voltage.
Features low gate charge characteristics for reduced switching losses.
Capable of handling high current with comprehensive avalanche energy ratings.

Applications

DC/DC converters in computing systems
Point-of-load (POL) modules for servers
Isolated DC/DC converters in telecom infrastructure
Industrial power supply designs

Procurement Notes

Verify the specific package variant required, as the datasheet covers multiple form factors including TO-251A, IPAK, and TO-252. Confirm that the component meets RoHS and Halogen-Free compliance standards if mandated by your assembly process. Ensure the design accounts for the specified thermal resistance values relative to the chosen PCB copper area and mounting conditions.

Selection Notes

Select this component when low conduction loss at standard logic-level gate voltages is critical. The device is suitable for applications requiring high current density within a compact footprint. Consider the thermal management requirements based on the junction-to-case resistance provided in the datasheet. Verify that the operating voltage remains within the 30V breakdown limit under all transient conditions.

Part Context

This part belongs to the AOD510/AOI510 series from Alpha & Omega Semiconductor Inc., utilizing their proprietary αMOS LV trench technology. It is engineered primarily for consumer market applications but offers reliability suitable for industrial and telecom sectors. The product line emphasizes high current capability and low on-resistance to improve overall system efficiency in power conversion circuits.

Replacement Considerations

Check pinout compatibility if substituting with other 30V N-channel MOSFETs in DPAK or similar packages. Ensure the replacement device meets or exceeds the 70A continuous current rating and the <4mΩ RDS(on) specification at 4.5V VGS to maintain circuit performance.