AOI538

Single FETs, MOSFETs Overview

The AOI538 is a single N-channel MOSFET manufactured by Alpha & Omega Semiconductor Inc. It utilizes Trench Power AlphaMOS (αMOS™ LV) technology to achieve low on-resistance. The device features a drain-source voltage (Vdss) of 30 V and a continuous drain current (Id) of 34 A at ambient temperature or 70 A at case temperature. Key electrical parameters include a maximum gate-source voltage (Vgs) of ±20 V, a maximum power dissipation of 4.2 W at ambient temperature and 24 W at case temperature, and an operating junction temperature range of -55°C to 175°C.

Single FETs, MOSFETs Feature Summary

• Utilizes Trench Power AlphaMOS (αMOS™ LV) technology for enhanced performance
• Designed as a surface-mount component for efficient PCB integration
• Provides robust thermal management capabilities with specified case temperature ratings

Single FETs, MOSFETs Applications

• DC-DC converter circuits
• Power switching applications
• Load switch implementations

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix and package variant when sourcing, as manufacturers may offer different tape-and-reel quantities or lead times. Confirm RoHS compliance status directly with the supplier or through official documentation before finalizing procurement plans. Ensure that the received components match the exact part number designation to avoid compatibility issues in the target design.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring a 30 V rating with high current handling capabilities up to 70 A under case cooling conditions. Consider the TO-251A package constraints regarding thermal resistance and available board space. Evaluate the gate charge and threshold voltage specifications against the driving circuit's output capability to ensure optimal switching efficiency and minimal conduction losses.

Single FETs, MOSFETs Part Context

The AOI538 belongs to the Alpha & Omega Semiconductor lineup of discrete semiconductors, specifically within their N-channel MOSFET category. This series leverages advanced trench gate technology to deliver improved figure-of-merit characteristics compared to standard planar devices. It serves as a fundamental building block for power management systems where size and efficiency are critical design drivers.

Single FETs, MOSFETs Replacement Considerations

Consult official manufacturer substitution guides for verified equivalents. Cross-reference pinouts and thermal characteristics carefully when considering alternative suppliers.