Single FETs, MOSFETs AOI600A60 product image

AOI600A60

$0.39
  • Description:MOSFET N-CH 600V 8A TO251A
  • Series:aMOS5™
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tube

SKU:2fc6a558aeb7 Category: Brand:

  
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AOI600A60 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is MOSFET N-CH 600V 8A TO251A. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AOI600A60

  • Description:MOSFET N-CH 600V 8A TO251A
  • Series:aMOS5™
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):600 V
  • Current - Continuous Drain (Id) @ 25°C:8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:600mOhm @ 2.1A, 10V
  • Vgs(th) (Max) @ Id:3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:11.5 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:608 pF @ 100 V
  • FET Feature:-
  • Power Dissipation (Max):96W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-251A
  • Package / Case:TO-251-3 Stub Leads, IPAK

Single FETs, MOSFETs datasheet and documents for AOI600A60

AOI600A60

Single FETs, MOSFETs Overview

The AOI600A60 is a 600V N-Channel Power Transistor from the aMOS5 series, manufactured by Alpha & Omega Semiconductor Inc. It features a maximum drain-source breakdown voltage of 700V and a continuous drain current of 2.1A at 25°C. The device has a maximum on-resistance of 0.6Ω at VGS=10V and ID=2.1A. Key dynamic parameters include a total gate charge of 11.5nC and a body-diode reverse recovery time of 159ns. It is housed in a TO-252 (DPAK) package with a junction temperature range up to 150°C.

Single FETs, MOSFETs Feature Summary

  • Utilizes aMOS5 technology for optimized power performance
  • Features a robust body diode with defined reverse recovery characteristics
  • Designed for high-voltage switching applications

Single FETs, MOSFETs Applications

  • High-voltage power switching circuits
  • DC-DC converter topologies
  • Motor control systems

Single FETs, MOSFETs Procurement Notes

Verify the specific package variant during procurement, as the datasheet indicates availability in TO-252 (DPAK), IPAK, and TO-251A configurations. Confirm that the ordered component matches the required thermal resistance and pinout for the intended PCB layout. Ensure compliance with export control regulations and legal requirements applicable to your region before finalizing orders.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring a 600V rating with moderate current handling capabilities around 2.1A. Consider the 0.6Ω on-resistance for conduction loss calculations. Evaluate the thermal impedance characteristics if operating in environments with limited heatsinking or high ambient temperatures. Verify compatibility with standard gate drive voltages of 10V for optimal switching performance.

Single FETs, MOSFETs Part Context

This part belongs to the aMOS5 family of N-Channel MOSFETs from Alpha & Omega Semiconductor. It shares design lineage with similar high-voltage transistors like the AOD600A60, differing primarily in packaging options such as TO-252, IPAK, and TO-251A. The series focuses on balancing low on-resistance with reliable switching speeds for general-purpose power electronics.

Single FETs, MOSFETs Replacement Considerations

The AOD600A60 is documented as a related part number within the same datasheet, offering identical electrical specifications but potentially different packaging options such as IPAK or TO-251A. When substituting, verify that the physical footprint and thermal dissipation characteristics of the alternative package meet the design constraints.

Single FETs, MOSFETs FAQ

What is the maximum drain-source breakdown voltage?

The maximum drain-source breakdown voltage (BVDSS) is specified as 700V.

What is the typical gate threshold voltage?

The gate threshold voltage (VGS(th)) typically ranges from 2.9V to 4.1V under standard test conditions.

What is the body-diode reverse recovery time?

The body-diode reverse recovery time (Trr) is 159ns when tested at IF=2.1A and dI/dt=100A/ms.

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