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AOI600A60 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is MOSFET N-CH 600V 8A TO251A. Review the specifications below when checking this part for your BOM.
The AOI600A60 is a 600V N-Channel Power Transistor from the aMOS5 series, manufactured by Alpha & Omega Semiconductor Inc. It features a maximum drain-source breakdown voltage of 700V and a continuous drain current of 2.1A at 25°C. The device has a maximum on-resistance of 0.6Ω at VGS=10V and ID=2.1A. Key dynamic parameters include a total gate charge of 11.5nC and a body-diode reverse recovery time of 159ns. It is housed in a TO-252 (DPAK) package with a junction temperature range up to 150°C.
Verify the specific package variant during procurement, as the datasheet indicates availability in TO-252 (DPAK), IPAK, and TO-251A configurations. Confirm that the ordered component matches the required thermal resistance and pinout for the intended PCB layout. Ensure compliance with export control regulations and legal requirements applicable to your region before finalizing orders.
Select this component for applications requiring a 600V rating with moderate current handling capabilities around 2.1A. Consider the 0.6Ω on-resistance for conduction loss calculations. Evaluate the thermal impedance characteristics if operating in environments with limited heatsinking or high ambient temperatures. Verify compatibility with standard gate drive voltages of 10V for optimal switching performance.
This part belongs to the aMOS5 family of N-Channel MOSFETs from Alpha & Omega Semiconductor. It shares design lineage with similar high-voltage transistors like the AOD600A60, differing primarily in packaging options such as TO-252, IPAK, and TO-251A. The series focuses on balancing low on-resistance with reliable switching speeds for general-purpose power electronics.
The AOD600A60 is documented as a related part number within the same datasheet, offering identical electrical specifications but potentially different packaging options such as IPAK or TO-251A. When substituting, verify that the physical footprint and thermal dissipation characteristics of the alternative package meet the design constraints.
The maximum drain-source breakdown voltage (BVDSS) is specified as 700V.
The gate threshold voltage (VGS(th)) typically ranges from 2.9V to 4.1V under standard test conditions.
The body-diode reverse recovery time (Trr) is 159ns when tested at IF=2.1A and dI/dt=100A/ms.
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