AOI8N25

$0.31

Description：MOSFET N-CH 250V 8A TO251A
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tube

SKU:eb10e1348cec Category: Single FETs, MOSFETs Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 250V 8A TO251A
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：250 V
Current - Continuous Drain (Id) @ 25°C：8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：560mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id：4.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：7.2 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：306 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：78W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-251A
Package / Case：TO-251-3 Stub Leads, IPAK

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AOI8N25

Overview

The AOI8N25 is a 250V N-Channel MOSFET fabricated using an advanced high-voltage process. It features a continuous drain current of 8A at VGS=10V and a maximum on-resistance of 0.56Ω under the same conditions. The device supports a pulsed drain current of 16A and includes guaranteed avalanche capability with single-pulsed energy ratings up to 132mJ. Thermal characteristics include a junction-to-case resistance of 1.6°C/W and a junction-to-ambient resistance of 55°C/W in a TO-252 package.

Feature Summary

Advanced high-voltage MOSFET process designed for robust performance in AC-DC applications
Guaranteed avalanche capability tested for repetitive and single-pulse energy ratings
Low gate charge and capacitance values optimized for switching efficiency
High peak diode recovery dv/dt rating for synchronous rectifier reliability

Applications

Boost converters
Synchronous rectifiers
Consumer power supplies
Telecom power supplies
Industrial power supplies
LED backlighting

Procurement Notes

Verify the specific suffix against official Alpha & Omega Semiconductor documentation to confirm pinout compatibility and thermal pad configuration. Confirm RoHS compliance status and check for any recent product change notices or obsolescence announcements directly from the manufacturer before finalizing procurement plans.

Selection Notes

Select this component for designs requiring 250V blocking voltage and moderate current handling up to 8A. Evaluate thermal management requirements based on the specified junction-to-ambient resistance for air-cooled environments. Ensure the gate drive voltage meets the 10V requirement for optimal on-resistance performance and verify that the application does not exceed the single-pulsed avalanche energy limits.

Part Context

This part belongs to the AOD/AOI series of N-Channel MOSFETs from Alpha & Omega Semiconductor. These devices are engineered specifically for offline power supply topologies, offering a balance of low conduction losses and high ruggedness. The AOI variant typically denotes specific packaging or testing configurations within the broader family designed for consumer and industrial electronics.

Replacement Considerations

Check for direct cross-reference models such as the AOD8N25 which shares identical electrical specifications but may differ in packaging or marking details. Verify that any substitute maintains the same 250V rating, 8A current capacity, and TO-252 footprint to ensure mechanical and electrical compatibility without redesign.