Single FETs, MOSFETs AOI9N50 product image

AOI9N50

  • Description:MOSFET N-CH 500V 9A TO251A
  • Series:-
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tube

SKU:048f3ccce165 Category: Brand:

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AOI9N50 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is MOSFET N-CH 500V 9A TO251A. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AOI9N50

  • Description:MOSFET N-CH 500V 9A TO251A
  • Series:-
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):500 V
  • Current - Continuous Drain (Id) @ 25°C:9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:860mOhm @ 4.5A, 10V
  • Vgs(th) (Max) @ Id:4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:24 nC @ 10 V
  • Vgs (Max):±30V
  • Input Capacitance (Ciss) (Max) @ Vds:1160 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):178W (Tc)
  • Operating Temperature:-50°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-251A
  • Package / Case:TO-251-3 Stub Leads, IPAK

Single FETs, MOSFETs datasheet and documents for AOI9N50

AOI9N50

Single FETs, MOSFETs Overview

The AOI9N50 is a 500V N-Channel MOSFET fabricated using an advanced high-voltage process. It features a maximum drain-source voltage of 500V and a continuous drain current of 9A at 25°C case temperature. The static drain-source on-resistance is less than 0.86Ω at VGS=10V. The device includes guaranteed avalanche capability with single pulsed avalanche energy up to 433mJ. It operates within a junction temperature range of -50°C to 150°C and utilizes a TO-252 DPAK package.

Single FETs, MOSFETs Feature Summary

  • Advanced high-voltage MOSFET process designed for robustness in AC-DC applications
  • Guaranteed avalanche capability with 100% UIS testing
  • Low input capacitance and reverse transfer capacitance for efficient switching
  • Optimized gate charge characteristics for reduced drive power

Single FETs, MOSFETs Applications

  • Offline power supply designs
  • AC-DC converter circuits
  • General purpose switching applications

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix matches the required package variant, as AOD9N50 and AOI9N50 share specifications but may differ in packaging or marking. Confirm thermal resistance requirements against your heatsinking design, noting that RqJA values depend heavily on PCB copper area and airflow conditions. Ensure component authenticity through authorized distributors to guarantee performance parameters align with datasheet limits.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring moderate current handling with high voltage blocking capabilities. The low RDS(on) minimizes conduction losses, while the guaranteed avalanche rating simplifies protection circuitry in inductive loads. Evaluate thermal management strategies carefully, as power dissipation limits are strictly tied to case temperature and ambient conditions defined in the derating curves.

Single FETs, MOSFETs Part Context

This part belongs to Alpha & Omega Semiconductor's lineup of high-voltage N-Channel MOSFETs. It shares identical electrical specifications with the AOD9N50 model, differing primarily in package identification or manufacturing lot codes. The series targets cost-sensitive offline power supplies where reliability and switching efficiency are critical design constraints.

Single FETs, MOSFETs Replacement Considerations

The AOD9N50 is electrically equivalent to the AOI9N50. Verify pinout compatibility and thermal pad configuration when substituting. Ensure replacement parts meet the same 500V breakdown and 9A current ratings to maintain system safety margins.

AOI9N50AOI9N50

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