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AOK015V75X2Q is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is 750V SILICON CARBIDE MOSFET. Review the specifications below when checking this part for your BOM.
The AOK015V75X2Q is a 750 V αSiC Silicon Carbide Power MOSFET in a TO-247-3L package. It features a typical RDS(ON) of 15 mΩ at VGS = 15 V and ID = 24 A, with a maximum continuous drain current of 96 A at TC = 25°C. The device supports a pulsed drain current (IDM) of 200 A and has been tested for 100% UIS capability. Key dynamic parameters include a total gate charge (Qg) of 152 nC, body diode reverse recovery charge (Qrr) of 238 nC, and stored output energy (EOSS) of 36 µJ at 400 V.
Verify the specific ordering suffix matches the required package form factor. Confirm that the component meets all applicable automotive qualification standards required by the target application. Ensure the procurement channel provides valid traceability documentation for the semiconductor batch.
Select this component for high-voltage applications requiring low on-resistance and robust avalanche energy handling. Consider the thermal characteristics and derating curves when designing heatsinking solutions. Verify that the gate drive circuitry can support the specified +15 V operating range for optimal performance.
This part belongs to Alpha & Omega Semiconductor's αSiC product line, designed for high-efficiency power conversion. It serves as a silicon carbide alternative to traditional silicon MOSFETs, offering superior thermal performance and switching speeds suitable for modern electric vehicle and industrial power systems.
No public confirmed substitute part numbers are available in the provided datasheet.
The maximum junction temperature (TJ) is rated up to 175°C.
Yes, the datasheet confirms the device has been 100% UIS tested with a single pulsed avalanche energy rating of 1.8 J.
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