Single FETs, MOSFETs AOK015V75X2Q product image

AOK015V75X2Q

$24.06
  • Description:750V SILICON CARBIDE MOSFET
  • Series:-
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tube

SKU:da03183931c6 Category: Brand:

  
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AOK015V75X2Q is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is 750V SILICON CARBIDE MOSFET. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AOK015V75X2Q

  • Description:750V SILICON CARBIDE MOSFET
  • Series:-
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tube
  • FET Type:N-Channel
  • Technology:SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss):750 V
  • Current - Continuous Drain (Id) @ 25°C:96A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):15V
  • Rds On (Max) @ Id, Vgs:22mOhm @ 24A, 15V
  • Vgs(th) (Max) @ Id:3.5V @ 24mA
  • Gate Charge (Qg) (Max) @ Vgs:152 nC @ 15 V
  • Vgs (Max):+15V, -5V
  • Input Capacitance (Ciss) (Max) @ Vds:4880 pF @ 400 V
  • FET Feature:-
  • Power Dissipation (Max):312W (Tj)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-247
  • Package / Case:TO-247-3

Single FETs, MOSFETs datasheet and documents for AOK015V75X2Q

AOK015V75X2Q

Single FETs, MOSFETs Overview

The AOK015V75X2Q is a 750 V αSiC Silicon Carbide Power MOSFET in a TO-247-3L package. It features a typical RDS(ON) of 15 mΩ at VGS = 15 V and ID = 24 A, with a maximum continuous drain current of 96 A at TC = 25°C. The device supports a pulsed drain current (IDM) of 200 A and has been tested for 100% UIS capability. Key dynamic parameters include a total gate charge (Qg) of 152 nC, body diode reverse recovery charge (Qrr) of 238 nC, and stored output energy (EOSS) of 36 µJ at 400 V.

Single FETs, MOSFETs Feature Summary

  • Utilizes proprietary αSiC technology for low conduction loss and fast switching performance.
  • Optimized for a recommended operating gate drive voltage of +15 V.
  • Features low gate resistance and capacitance to minimize switching losses.
  • AEC-Q101 automotive qualified for reliability in demanding environments.

Single FETs, MOSFETs Applications

  • xEV Charger
  • Electric Vehicle Supply Equipment (EVSE)
  • Motor Drives
  • Automotive Inverters

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix matches the required package form factor. Confirm that the component meets all applicable automotive qualification standards required by the target application. Ensure the procurement channel provides valid traceability documentation for the semiconductor batch.

Single FETs, MOSFETs Selection Notes

Select this component for high-voltage applications requiring low on-resistance and robust avalanche energy handling. Consider the thermal characteristics and derating curves when designing heatsinking solutions. Verify that the gate drive circuitry can support the specified +15 V operating range for optimal performance.

Single FETs, MOSFETs Part Context

This part belongs to Alpha & Omega Semiconductor's αSiC product line, designed for high-efficiency power conversion. It serves as a silicon carbide alternative to traditional silicon MOSFETs, offering superior thermal performance and switching speeds suitable for modern electric vehicle and industrial power systems.

Single FETs, MOSFETs Replacement Considerations

No public confirmed substitute part numbers are available in the provided datasheet.

Single FETs, MOSFETs FAQ

What is the maximum junction temperature rating?

The maximum junction temperature (TJ) is rated up to 175°C.

Is the device suitable for unclamped inductive switching?

Yes, the datasheet confirms the device has been 100% UIS tested with a single pulsed avalanche energy rating of 1.8 J.

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$24.06
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