AOK060V75X2Q

$7.96

Description：750V SILICON CARBIDE MOSFET
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tube

SKU:113cdd914b3b Category: Single FETs, MOSFETs Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

AOK060V75X2Q is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is 750V SILICON CARBIDE MOSFET. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AOK060V75X2Q

Description：750V SILICON CARBIDE MOSFET
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tube
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：750 V
Current - Continuous Drain (Id) @ 25°C：29A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：15V
Rds On (Max) @ Id, Vgs：80mOhm @ 6A, 15V
Vgs(th) (Max) @ Id：3.5V @ 6mA
Gate Charge (Qg) (Max) @ Vgs：39.4 nC @ 15 V
Vgs (Max)：+15V, -5V
Input Capacitance (Ciss) (Max) @ Vds：1165 pF @ 400 V
FET Feature：-
Power Dissipation (Max)：103W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Through Hole
Supplier Device Package：TO-247
Package / Case：TO-247-3

Single FETs, MOSFETs datasheet and documents for AOK060V75X2Q

AOK060V75X2Q

Single FETs, MOSFETs Overview

The AOK060V75X2Q is a 750V αSiC Silicon Carbide Power MOSFET in a TO-247-3L package. It features a maximum drain-source voltage of 750V, a continuous drain current of 32A at 25°C case temperature, and a typical on-resistance of 60mΩ at VGS=15V. The device supports a pulsed drain current of 90A and has been tested for 100% Unclamped Inductive Switching (UIS). Key electrical parameters include a total gate charge of 39.4nC, a body diode reverse recovery charge of 74.3nC, and an output capacitance stored energy of 12µJ at 400V.

Single FETs, MOSFETs Feature Summary

Utilizes proprietary αSiC technology to achieve low conduction losses and fast switching speeds with reduced gate resistance and capacitance.
Optimized for a recommended operating gate drive voltage of +15V while maintaining robust performance characteristics.
Features a low reverse recovery body diode charge (Qrr) to minimize switching losses during freewheeling operations.
Fully qualified under the AEC-Q101 automotive standard for reliability in demanding environments.

Single FETs, MOSFETs Applications

xEV Charger systems
Electric Vehicle Supply Equipment (EVSE)
Motor Drives
Automotive Inverters

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix 'Q' corresponds to the required automotive qualification status and tube shipping format. Confirm that the TO-247-3L package dimensions align with your PCB land pattern requirements. Ensure thermal management solutions account for the junction-to-case thermal resistance specifications provided in the datasheet to maintain safe operating temperatures.

Single FETs, MOSFETs Selection Notes

Select this component when high-voltage isolation and low switching loss are critical for power conversion efficiency. The optimized gate drive requirement simplifies driver design compared to other wide-bandgap devices. Consider the thermal derating curves for applications where case temperatures exceed standard ambient levels to ensure long-term reliability and compliance with maximum junction temperature limits.

Single FETs, MOSFETs Part Context

This part belongs to Alpha & Omega Semiconductor's αSiC portfolio, designed for high-performance power management. It integrates advanced silicon carbide process technology with discrete packaging expertise. The product targets high-volume industrial and automotive markets requiring robust power semiconductor solutions for efficient energy conversion and motor control applications.