AOK065A60

$3.37

Description：N
Series：aMOS5™
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tube

SKU:eba3c0cb634b Category: Single FETs, MOSFETs Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

Product Detailed Parameters

Description：N
Series：aMOS5™
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：600 V
Current - Continuous Drain (Id) @ 25°C：4.1A (Ta), 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：34 nC @ 10 V
Vgs (Max)：20V
Input Capacitance (Ciss) (Max) @ Vds：1935 pF @ 100 V
FET Feature：-
Power Dissipation (Max)：8.3W (Ta), 208W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247
Package / Case：TO-247-3

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AOK065A60

Overview

The AOK065A60 is a N-channel Power MOSFET from Alpha & Omega Semiconductor, housed in a TO-247 package. It features a drain-source breakdown voltage of 600V and a maximum rating of 700V at the highest junction temperature. The device supports a continuous drain current of 25A at 25°C case temperature and handles a pulsed avalanche current of 168A. Key electrical parameters include a maximum on-resistance of 0.065Ω at VGS=10V, a total gate charge of 106nC, and a forward transconductance of 32S. Thermal performance includes a junction-to-case resistance of 0.28°C/W and a power dissipation capability of 357W.

Feature Summary

High-voltage N-channel architecture designed for robust power switching applications
Optimized low on-resistance characteristics to minimize conduction losses
Integrated body diode with defined reverse recovery specifications
Thermal management optimized for high-power density mounting

Applications

Industrial motor control systems
Power supply units
DC-DC converters
Inverter circuits

Procurement Notes

Verify the specific datasheet revision (Rev.1.2) matches your design requirements. Confirm that the TO-247 pinout aligns with your PCB footprint. Ensure thermal interface materials are selected to maintain the specified junction-to-case thermal resistance limits during operation.

Selection Notes

Select this component when designing circuits requiring high voltage blocking capabilities combined with moderate continuous current handling. Evaluate the thermal derating curves to ensure the operating junction temperature remains within safe limits under expected load conditions and ambient temperatures.

Part Context

This part belongs to Alpha & Omega Semiconductor's discrete power device portfolio. The manufacturer specializes in integrated power semiconductor solutions, including MOSFETs and wide bandgap devices, targeting high-volume electronics such as data centers, consumer goods, and automotive applications.

Replacement Considerations

R6035ENZ4C13 by Rohm Semiconductor is documented as a similar alternative.

FAQ

What is the maximum repetitive avalanche energy rating?

The datasheet specifies an avalanche current rating of 168A but does not explicitly list a numerical value for repetitive avalanche energy in the provided text.