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AOK065V120X2Q is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is 1200V SILICON CARBIDE MOSFET. Review the specifications below when checking this part for your BOM.
The AOK065V120X2Q is a 1200 V αSiC Silicon Carbide Power MOSFET in a TO-247-3L package. It features a typical on-resistance of 65 mΩ at 15 V gate drive and supports a continuous drain current of 40.3 A at 25°C case temperature. The device exhibits low switching losses with a total gate charge of 62.3 nC and a reverse recovery charge of 155 nC. It is rated for a maximum junction temperature of 175°C and includes 100% UIS testing.
Verify the specific ordering suffix X2Q to confirm tube packaging and shipping quantities. Ensure the design accommodates the recommended operating gate-source voltage range of -5 V to +15 V. Confirm thermal management requirements align with the specified junction-to-case thermal resistance for the target application environment.
Select this component for high-voltage applications requiring low conduction and switching losses. The 1200 V rating suits high-power electric vehicle and industrial systems. Consider the 175°C maximum junction temperature capability for enhanced thermal performance compared to standard silicon devices.
This part belongs to Alpha & Omega Semiconductor's αSiC product line, designed for high-efficiency power conversion. It replaces traditional silicon MOSFETs in demanding environments where higher breakdown voltage and thermal stability are required.
No public confirmed substitute part numbers are documented in the provided source material.
The maximum transient gate-source voltage is +20 V / -8 V.
Yes, the AOK065V120X2Q is AEC-Q101 automotive qualified.
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