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Product Detailed Parameters
- Description：MOSFET N-CH 600V 38A TO247
- Series：aMOS5™
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：38A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：95mOhm @ 19A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：78 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：4010 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：378W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-247
- Package / Case：TO-247-3
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Overview
The AOK095A60 is a 600V N-Channel Power MOSFET from Alpha & Omega Semiconductor, utilizing proprietary αMOS5™ technology. It features a maximum drain-source breakdown voltage of 700V and a continuous drain current of 38A at case temperature. The device exhibits a typical on-resistance of 0.095Ω at VGS=10V and ID=19A. Key dynamic parameters include a total gate charge of 78nC and a body diode reverse recovery time of 444ns. Packaged in a TO-247 housing, it supports junction temperatures up to 150°C.
Feature Summary
- Proprietary αMOS5™ technology for optimized switching performance
- Enhanced body diode characteristics with fast reverse recovery
- Low on-resistance for improved conduction efficiency
- Optimized capacitance parameters for reduced EMI
Applications
- Switching Mode Power Supplies (SMPS)
- Flyback converter topologies
- LLC resonant converter designs
- Micro-inverter DC/AC conversion systems
Procurement Notes
Verify the specific package variant and revision level against the latest manufacturer datasheet before integration. Confirm thermal management requirements align with the specified junction-to-case resistance values. Ensure sourcing channels provide authentic components with traceable documentation to maintain compliance with safety standards.
Selection Notes
Select this component for high-voltage applications requiring robust body diode performance and low switching losses. Compare the 0.095Ω on-resistance and 78nC gate charge against alternative devices to ensure compatibility with existing gate drive circuits and thermal constraints within the target system design.
Part Context
This part belongs to the AOK series of N-Channel Power MOSFETs manufactured by Alpha & Omega Semiconductor. It is designed for general-purpose power switching applications, offering a balance of high voltage handling and efficient thermal performance in a standard through-hole package suitable for industrial and consumer electronics.
Replacement Considerations
Direct substitutes must match the 600V rating, TO-247 package, and similar RDS(ON) and Qg specifications. Verify pinout compatibility and thermal resistance values when considering cross-brand alternatives to ensure seamless integration without circuit redesign.
