Single FETs, MOSFETs AOK125A60 product image

AOK125A60

$5.22
  • Description:MOSFET N-CH 600V 28A TO247
  • Series:aMOS5™
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tube

SKU:8d1458057631 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

AOK125A60 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is MOSFET N-CH 600V 28A TO247. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AOK125A60

  • Description:MOSFET N-CH 600V 28A TO247
  • Series:aMOS5™
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):600 V
  • Current - Continuous Drain (Id) @ 25°C:28A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:125mOhm @ 14A, 10V
  • Vgs(th) (Max) @ Id:4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:39 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:2993 pF @ 100 V
  • FET Feature:-
  • Power Dissipation (Max):357W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-247
  • Package / Case:TO-247-3

Single FETs, MOSFETs datasheet and documents for AOK125A60

AOK125A60

Single FETs, MOSFETs Overview

The AOK125A60 is a 600V N-Channel Power Transistor utilizing proprietary aMOS5 technology. It features a maximum drain-source voltage of 600V and a continuous drain current of 28A at case temperature. The device offers a typical on-resistance of 0.108 ohms, with a maximum rating of 0.125 ohms at 10V gate drive. Key dynamic parameters include a total gate charge of 39nC and a reverse recovery time of 375ns for the body diode. Thermal resistance from junction to case is 0.35°C/W, supporting operation within a -55°C to 150°C junction temperature range.

Single FETs, MOSFETs Feature Summary

  • Proprietary aMOS5 technology designed for low on-resistance and optimized switching performance.
  • Enhanced body diode characteristics providing robustness and fast reverse recovery capabilities.
  • Optimized switching parameters engineered to improve electromagnetic interference (EMI) performance.

Single FETs, MOSFETs Applications

  • Switching Mode Power Supplies (SMPS) with Power Factor Correction (PFC)
  • Flyback converter topologies
  • LLC resonant converter topologies
  • Micro inverters with DC/AC inverter configurations

Single FETs, MOSFETs Procurement Notes

Verify component authenticity by cross-referencing the manufacturer's official datasheet revision history and ordering information. Confirm that the received package matches the specified TO-247 form factor and pinout configuration. Ensure compliance with export control regulations and applicable legal requirements prior to procurement. Evaluate product suitability for intended applications as the customer assumes responsibility for final design integration.

Single FETs, MOSFETs Selection Notes

Select this component for high-voltage power conversion designs requiring efficient thermal management and low conduction losses. The TO-247 package facilitates effective heat dissipation through direct mounting to heatsinks. Consider the specific gate charge and threshold voltage requirements when designing driver circuits to ensure reliable turn-on and turn-off transitions under varying load conditions.

Single FETs, MOSFETs Part Context

This part belongs to the aMOS5 series of N-Channel Power Transistors manufactured by Alpha & Omega Semiconductor Inc. The series emphasizes advanced silicon processing techniques to achieve superior electrical performance compared to standard MOSFET technologies. The TO-247 package provides a standardized mechanical interface for through-hole mounting in industrial power electronics assemblies.

Single FETs, MOSFETs Replacement Considerations

R6035ENZ4C13

Single FETs, MOSFETs FAQ

What is the maximum pulsed drain current capability?

The maximum pulsed drain current (IDM) is rated at 100A.

How does the junction temperature affect the breakdown voltage?

The breakdown voltage has a positive temperature coefficient, increasing by approximately 0.51V per degree Celsius rise in junction temperature.

AOK125A60AOK125A60
$5.22
Buy Now