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AOK125A60 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is MOSFET N-CH 600V 28A TO247. Review the specifications below when checking this part for your BOM.
The AOK125A60 is a 600V N-Channel Power Transistor utilizing proprietary aMOS5 technology. It features a maximum drain-source voltage of 600V and a continuous drain current of 28A at case temperature. The device offers a typical on-resistance of 0.108 ohms, with a maximum rating of 0.125 ohms at 10V gate drive. Key dynamic parameters include a total gate charge of 39nC and a reverse recovery time of 375ns for the body diode. Thermal resistance from junction to case is 0.35°C/W, supporting operation within a -55°C to 150°C junction temperature range.
Verify component authenticity by cross-referencing the manufacturer's official datasheet revision history and ordering information. Confirm that the received package matches the specified TO-247 form factor and pinout configuration. Ensure compliance with export control regulations and applicable legal requirements prior to procurement. Evaluate product suitability for intended applications as the customer assumes responsibility for final design integration.
Select this component for high-voltage power conversion designs requiring efficient thermal management and low conduction losses. The TO-247 package facilitates effective heat dissipation through direct mounting to heatsinks. Consider the specific gate charge and threshold voltage requirements when designing driver circuits to ensure reliable turn-on and turn-off transitions under varying load conditions.
This part belongs to the aMOS5 series of N-Channel Power Transistors manufactured by Alpha & Omega Semiconductor Inc. The series emphasizes advanced silicon processing techniques to achieve superior electrical performance compared to standard MOSFET technologies. The TO-247 package provides a standardized mechanical interface for through-hole mounting in industrial power electronics assemblies.
R6035ENZ4C13
The maximum pulsed drain current (IDM) is rated at 100A.
The breakdown voltage has a positive temperature coefficient, increasing by approximately 0.51V per degree Celsius rise in junction temperature.
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