AOK150V120X2

$7.66

Description：1200V SILICON CARBIDE MOSFET
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tube

SKU:1ee5b3ff53e9 Category: Single FETs, MOSFETs Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

AOK150V120X2 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is 1200V SILICON CARBIDE MOSFET. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AOK150V120X2

Description：1200V SILICON CARBIDE MOSFET
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tube
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：1200 V
Current - Continuous Drain (Id) @ 25°C：20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：15V
Rds On (Max) @ Id, Vgs：195mOhm @ 3.9A, 15V
Vgs(th) (Max) @ Id：3.6V @ 3.9mA
Gate Charge (Qg) (Max) @ Vgs：28.3 nC @ 15 V
Vgs (Max)：+15V, -5V
Input Capacitance (Ciss) (Max) @ Vds：664 pF @ 800 V
FET Feature：-
Power Dissipation (Max)：115W (Tj)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247
Package / Case：TO-247-3

Single FETs, MOSFETs datasheet and documents for AOK150V120X2

AOK150V120X2

Single FETs, MOSFETs Overview

The AOK150V120X2 is a 1200 V αSiC Silicon Carbide Power MOSFET manufactured by Alpha & Omega Semiconductor Inc. It utilizes proprietary αSiC technology to achieve low conduction and switching losses. Key electrical parameters include a maximum drain-source voltage (VDS) of 1200 V, a continuous drain current (ID) of 20 A at 25°C case temperature, and a typical on-resistance (RDS(ON)) of 150 mΩ at VGS = 15 V. The device features a total gate charge (Qg) of 28.3 nC and a body diode reverse recovery charge (Qrr) of 87.5 nC. It is rated for a junction temperature range of -55°C to 175°C and is supplied in a TO-247-3L tube package.

Single FETs, MOSFETs Feature Summary

Proprietary αSiC silicon carbide technology for enhanced performance
Optimized for fast switching with low gate resistance and capacitance
Low reverse recovery charge (Qrr) for the integrated body diode
Designed for operation with an optimized gate drive voltage of 15 V

Single FETs, MOSFETs Applications

EV Chargers
Solar Inverters
Motor Drives
UPS Systems
SMPS

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering part number AOK150V120X2 against official Alpha & Omega Semiconductor documentation to confirm availability and revision status. Ensure that the required shipping quantity matches the standard tube configuration of 30 units per tube as specified in the datasheet. Confirm compliance with RoHS3 specifications and export control regulations prior to procurement.

Single FETs, MOSFETs Selection Notes

Select this component for high-voltage applications requiring efficient power conversion. The 1200 V rating and 150 mΩ RDS(ON) make it suitable for demanding environments. Consider the 175°C maximum junction temperature capability for thermal management design. Verify that the gate drive circuitry supports the recommended 15 V operating voltage to ensure optimal switching characteristics and minimize losses.

Single FETs, MOSFETs Part Context

This component belongs to the αSiC series from Alpha & Omega Semiconductor, focusing on silicon carbide power devices. The TO-247-3L package provides robust mechanical stability and thermal dissipation capabilities. The product is designed to address complex power requirements in advanced electronics, leveraging AOS's integration of discrete semiconductor process technology and packaging know-how.