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AOK150V120X2Q is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is 1200V SILICON CARBIDE MOSFET. Review the specifications below when checking this part for your BOM.
The AOK150V120X2Q is a 1200 V αSiC Silicon Carbide Power MOSFET manufactured by Alpha & Omega Semiconductor. It utilizes proprietary αSiC technology to achieve low conduction and switching losses. The device features a TO-247-3L package with a maximum drain-source voltage of 1200 V, a typical on-resistance of 150 mΩ at 25°C, and a pulsed drain current of 40 A. It supports an operating junction temperature range from -55°C to 175°C and includes 100% UIS testing.
Verify the specific ordering suffix against official Alpha & Omega Semiconductor documentation to confirm package type and shipping quantity. Ensure that any assumed functional differences based solely on suffix variations are validated through direct datasheet cross-referencing before procurement decisions are finalized.
Select this component for high-voltage silicon carbide applications requiring automotive reliability standards. Consider the thermal resistance values and power dissipation limits when designing heatsinking solutions. Verify that the recommended operating gate voltage aligns with the system's control logic capabilities.
This part belongs to the αSiC series of wide bandgap power semiconductors designed for high-efficiency power conversion. It represents Alpha & Omega Semiconductor's integration of silicon carbide materials into their discrete MOSFET portfolio for demanding industrial and automotive environments.
Consult official manufacturer substitution guides for verified alternatives. Do not assume pin compatibility or electrical equivalence with other 1200 V packages without explicit datasheet confirmation.
The maximum transient gate-source voltage is +20 V.
Yes, the datasheet confirms 100% UIS testing.
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