AOK20S60L

Single FETs, MOSFETs Overview

The AOK20S60L is a 600V N-Channel Power MOSFET fabricated using the αMOSTM high voltage process. It features a maximum drain-source voltage of 600V and a continuous drain current of 20A at 25°C case temperature. The device offers a maximum on-resistance of 0.199Ω at VGS=10V and ID=10A. Key electrical parameters include a typical gate charge of 20nC, an input capacitance of 1038pF, and a peak diode recovery dv/dt rating. It supports a pulsed drain current of 40A and provides guaranteed avalanche capability with 100% UIS testing.

Single FETs, MOSFETs Feature Summary

• Fabricated using advanced αMOSTM high voltage process for robust switching performance
• Guaranteed avalanche capability with 100% Unclamped Inductive Switching (UIS) testing
• Optimized low RDS(on), Qg, and EOSS for efficient offline power supply designs
• High peak diode recovery dv/dt ruggedness

Single FETs, MOSFETs Applications

• Offline power supply designs
• Switching applications requiring high robustness
• General purpose power management circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix and package type against the manufacturer's official datasheet before procurement. Confirm that the component meets RoHS compliance requirements if applicable to your design constraints. Ensure that the thermal management solution aligns with the specified junction-to-case and junction-to-ambient thermal resistance values provided in the documentation to maintain safe operating temperatures.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring a 600V N-Channel MOSFET with moderate current handling capabilities. Consider the 0.199Ω maximum on-resistance for conduction loss calculations. The guaranteed avalanche energy rating makes it suitable for inductive loads where transient events are expected. Verify that the gate drive voltage supports the 10V threshold for optimal RDS(on) performance.

Single FETs, MOSFETs Part Context

The AOK20S60L belongs to Alpha & Omega Semiconductor's αMOSTM family of power transistors. This series utilizes advanced high-voltage process technology to deliver high performance and reliability. The part is designed to integrate easily into existing and new power supply architectures, offering a balance of low switching losses and robust operational characteristics.

Single FETs, MOSFETs Replacement Considerations

Check for direct pin-compatible alternatives within the same voltage and current class. Verify that any substitute maintains or exceeds the 600V breakdown voltage and 20A continuous current ratings. Ensure the replacement device has comparable gate charge and on-resistance values to preserve switching efficiency and thermal performance.