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The AOK30B135D2 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Alpha & Omega Semiconductor Inc. It features a maximum collector-emitter breakdown voltage of 1350 V and a continuous collector current rating of 30 A at 25°C. The device utilizes a TO-247-3 through-hole package, designed for high-power applications requiring robust thermal performance and high voltage isolation.
Verify the specific suffix D2 against official Alpha & Omega documentation to confirm pinout and electrical characteristics match design requirements. Ensure compatibility with existing PCB footprints for the TO-247-3 package. Confirm RoHS compliance status if required by project specifications.
Select this component for applications demanding high voltage isolation and moderate current levels. Compare switching energy losses and thermal resistance against alternative IGBTs in the same voltage class. Ensure gate drive circuitry supports the required voltage thresholds for optimal performance.
This part belongs to the AOK30 series of IGBTs from Alpha & Omega Semiconductor. It shares the core technology with variants like AOK30B135W1 but differs in packaging or specific manufacturing lot attributes defined by the D2 suffix. It serves as a discrete solution for power conversion tasks.
Publicly confirmed substitute part numbers are not available in the provided source material. Cross-reference with other 1350V 30A TO-247 IGBTs only after verifying detailed electrical parameter equivalence.