AOK40B65HQ1

AOK40B65HQ1

$1.62
  • Description:IGBT 650V 80A TO-247
  • Series:AlphaIGBT™

SKU:9bb09492f955 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:IGBT 650V 80A TO-247
  • Series:AlphaIGBT™
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tube
  • IGBT Type:-
  • Voltage - Collector Emitter Breakdown (Max):650 V
  • Current - Collector (Ic) (Max):80 A
  • Current - Collector Pulsed (Icm):120 A
  • Vce(on) (Max) @ Vge, Ic:2.6V @ 15V, 40A
  • Power - Max:312 W
  • Switching Energy:1.19mJ (on), 380µJ (off)
  • Input Type:Standard
  • Gate Charge:61 nC
  • Td (on/off) @ 25°C:31ns/110ns
  • Test Condition:400V, 40A, 7.5Ohm, 15V
  • Reverse Recovery Time (trr):-
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-247-3
  • Supplier Device Package:TO-247
  • Grade:-
  • Qualification:-

Download product information

AOK40B65HQ1

Overview

The AOK40B65HQ1 is a 650V AlphaIGBT with an integrated anti-parallel diode, housed in a TO-247 package. It supports a continuous collector current of 40A at 100°C and 80A at 25°C. The device features a maximum collector-emitter saturation voltage of 2.6V at 25°C and 2.68V at 175°C. Key electrical parameters include a gate threshold voltage of 4.7V, total gate charge of 61nC, and switching energies of 1.19mJ (turn-on) and 0.38mJ (turn-off) at 25°C. Thermal characteristics specify a junction-to-case resistance of 0.48°C/W for the IGBT and 1.6°C/W for the diode.

Feature Summary

  • Utilizes latest AlphaIGBT technology for high switching speed and low turn-off loss.
  • Integrates a soft and fast recovery anti-parallel diode to minimize reverse recovery charge.
  • Designed for excellent electromagnetic interference behavior during operation.

Applications

  • Uninterruptible Power Supplies
  • Solar Inverters
  • Welding Equipment

Procurement Notes

Verify component authenticity through authorized distribution channels. Confirm that the specific order matches the manufacturer part number AOK40B65HQ1. Ensure compliance with export control regulations and applicable legal requirements before finalizing transactions.

Selection Notes

Select this component for designs requiring 650V blocking capability and up to 40A continuous current. Evaluate thermal management based on the specified junction-to-case resistances. Verify that the operating temperature range of -55°C to 175°C aligns with system constraints.

Part Context

This device belongs to the AlphaIGBT product family from Alpha & Omega Semiconductor Inc. It is designed as a single N-channel insulated gate bipolar transistor module intended for medium-power switching applications where efficiency and switching speed are critical design factors.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Engineers must evaluate alternative components based on matching voltage ratings, current capabilities, and package dimensions.

FAQ

What is the maximum collector-emitter breakdown voltage?

The maximum collector-emitter breakdown voltage (BV_CES) is 650V.

What is the junction-to-case thermal resistance for the integrated diode?

The maximum junction-to-case thermal resistance for the diode is 1.6°C/W.

What is the typical gate threshold voltage?

The typical gate-emitter threshold voltage (V_GE(th)) is 4.7V at 25°C.

AOK40B65HQ1AOK40B65HQ1
$1.62
Buy Now