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The AOK40B65HQ1 is a 650V AlphaIGBT with an integrated anti-parallel diode, housed in a TO-247 package. It supports a continuous collector current of 40A at 100°C and 80A at 25°C. The device features a maximum collector-emitter saturation voltage of 2.6V at 25°C and 2.68V at 175°C. Key electrical parameters include a gate threshold voltage of 4.7V, total gate charge of 61nC, and switching energies of 1.19mJ (turn-on) and 0.38mJ (turn-off) at 25°C. Thermal characteristics specify a junction-to-case resistance of 0.48°C/W for the IGBT and 1.6°C/W for the diode.
Verify component authenticity through authorized distribution channels. Confirm that the specific order matches the manufacturer part number AOK40B65HQ1. Ensure compliance with export control regulations and applicable legal requirements before finalizing transactions.
Select this component for designs requiring 650V blocking capability and up to 40A continuous current. Evaluate thermal management based on the specified junction-to-case resistances. Verify that the operating temperature range of -55°C to 175°C aligns with system constraints.
This device belongs to the AlphaIGBT product family from Alpha & Omega Semiconductor Inc. It is designed as a single N-channel insulated gate bipolar transistor module intended for medium-power switching applications where efficiency and switching speed are critical design factors.
Publicly confirmed substitute part numbers are not available in the provided documentation. Engineers must evaluate alternative components based on matching voltage ratings, current capabilities, and package dimensions.
The maximum collector-emitter breakdown voltage (BV_CES) is 650V.
The maximum junction-to-case thermal resistance for the diode is 1.6°C/W.
The typical gate-emitter threshold voltage (V_GE(th)) is 4.7V at 25°C.