AOK500V120X2

$4.67

Description：1200V SILICON CARBIDE MOSFET
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tube

SKU:e0866ec5dece Category: Single FETs, MOSFETs Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

AOK500V120X2 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is 1200V SILICON CARBIDE MOSFET. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AOK500V120X2

Description：1200V SILICON CARBIDE MOSFET
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tube
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：1200 V
Current - Continuous Drain (Id) @ 25°C：6.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：15V
Rds On (Max) @ Id, Vgs：675mOhm @ 1.2A, 15V
Vgs(th) (Max) @ Id：3.5V @ 1.2mA
Gate Charge (Qg) (Max) @ Vgs：12 nC @ 15 V
Vgs (Max)：+15V, -5V
Input Capacitance (Ciss) (Max) @ Vds：206 pF @ 800 V
FET Feature：-
Power Dissipation (Max)：44W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247
Package / Case：TO-247-3

Single FETs, MOSFETs datasheet and documents for AOK500V120X2

AOK500V120X2

Single FETs, MOSFETs Overview

The AOK500V120X2 is a 1200 V αSiC Power MOSFET utilizing proprietary silicon carbide technology. It features a TO-247-3L package with a typical RDS(ON) of 500 mΩ at 15 V gate drive. The device supports a continuous drain current of 6.3 A and a pulsed current of 10 A, with a maximum junction temperature of 175 °C. Key electrical parameters include a body diode reverse recovery charge (Qrr) of 50 nC, total gate charge of 12 nC, and an output capacitance stored energy (EOSS) of 6 µJ at 800 V. It is rated for 40 mJ single-pulsed avalanche energy.

Single FETs, MOSFETs Feature Summary

Proprietary αSiC MOSFET technology providing low conduction loss and fast switching capabilities
Optimized gate drive voltage of 15 V with low gate resistance and capacitance
Low reverse recovery diode characteristics suitable for hard commutation scenarios
100% Unclamped Inductive Switching (UIS) tested for robustness

Single FETs, MOSFETs Applications

EV Chargers
Solar Inverters
Motor Drives
UPS Systems
SMPS

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'X2' against official Alpha & Omega Semiconductor documentation to confirm shipping quantity and tube configuration details. Ensure compatibility with standard TO-247-3L mounting requirements and thermal interface materials. Confirm RoHS compliance status and REACH registration data prior to integration into final assemblies.

Single FETs, MOSFETs Selection Notes

Select this component for high-voltage applications requiring efficient switching at elevated temperatures up to 175 °C. The low Qrr and EOSS values make it suitable for resonant topologies and hard-switching converters where reverse recovery losses are critical. Evaluate thermal management needs based on the 3.4 °C/W junction-to-case resistance for optimal performance in dense designs.

Single FETs, MOSFETs Part Context

This part belongs to Alpha & Omega Semiconductor's αSiC portfolio, designed for renewable energy and industrial power systems. It serves as a silicon carbide alternative to traditional silicon MOSFETs, offering superior thermal stability and reduced switching losses. The TO-247-3L form factor facilitates through-hole mounting for robust mechanical connections in high-power modules.