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Product Detailed Parameters
- Description：IGBT 600V 100A TO-247
- Series：Alpha IGBT™
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：100 A
- Current - Collector Pulsed (Icm)：168 A
- Vce(on) (Max) @ Vge, Ic：2.4V @ 15V, 50A
- Power - Max：312 W
- Switching Energy：2.37mJ (on), 500µJ (off)
- Input Type：Standard
- Gate Charge：64 nC
- Td (on/off) @ 25°C：26ns/68ns
- Test Condition：400V, 50A, 6Ohm, 15V
- Reverse Recovery Time (trr)：132 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247
- Grade：-
- Qualification：-
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Overview
The AOK50B60D1 is a 600V, 50A Alpha IGBT with an integrated diode in a TO-247 package. It features a collector-emitter saturation voltage of 1.85V at 25°C and 50A. The device supports a pulsed collector current of 168A and offers a short-circuit withstand time of 10µs. Switching parameters include a turn-off delay of 68ns and a fall time of 18ns at 25°C. Total switching energy is 2.87mJ. The co-packaged diode exhibits a reverse recovery time of 132ns. Thermal resistance from junction to case is 0.4°C/W for the IGBT and 1.2°C/W for the diode.
Feature Summary
- Robust short circuit capability designed for high reliability
- Soft-co-packaged diode engineered to minimize switching losses
- Optimized for ease of paralleling and minimal gate spike under high dV/dt conditions
Applications
- Welding machines
- Solar inverters
- Uninterruptible Power Supply (UPS) systems
Procurement Notes
Verify component authenticity through authorized distribution channels. Confirm datasheet revision status matches design requirements. Ensure thermal management solutions align with specified junction-to-case resistance values. Validate that operating conditions remain within absolute maximum ratings to prevent device failure.
Selection Notes
Select this component for applications requiring high current handling and low conduction losses. Consider the specific switching energy characteristics when designing gate drive circuits. Evaluate thermal performance based on the provided transient thermal impedance curves for accurate junction temperature estimation.
Part Context
This part belongs to the Alpha IGBT line from Alpha & Omega Semiconductor. The series focuses on balancing conduction and switching performance. It targets industrial power conversion markets where efficiency and robustness are critical design constraints.
Replacement Considerations
No public confirmed substitute part numbers are available in the documentation.
FAQ
What is the maximum short-circuit withstand time?
The device can withstand a short circuit for 10 microseconds under specified conditions.
How does the diode forward voltage change with temperature?
The diode forward voltage decreases as the junction temperature increases, as shown in the typical electrical characteristics graphs.
What is the recommended gate resistance for standard switching tests?
Standard switching parameter tests are conducted with a gate resistance of 6 Ohms.
