AOK50B65H1

Overview

The AOK50B65H1 is a 650V Alpha IGBT with an integrated anti-parallel diode, housed in a TO-247 package. It supports a continuous collector current of 50A at TC=100°C and 100A at TC=25°C, with a pulsed collector current (Icm) of 150A. The saturation voltage (VCE(sat)) is typically 1.9V at TJ=25°C and 50A. Total gate charge (Qg) is 76nC. Switching energies at TJ=175°C include Eon of 1.92mJ and Eoff of 0.85mJ. The device withstands short-circuit conditions for up to 5µs. Thermal resistance from junction-to-case is 0.4°C/W for the IGBT and 1.4°C/W for the diode.

Feature Summary

• Utilizes latest Alpha IGBT technology for high efficiency and switching speed.
• Features a very fast and soft recovery freewheeling diode.
• Provides high efficient turn-on di/dt controllability and low turn-off switching loss.
• Demonstrates excellent EMI behavior and short-circuit ruggedness.

Applications

• Welding Machines
• Motor Drives
• UPS & Solar Inverters
• Very High Switching Frequency Applications

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging and variant selection. Confirm that the component meets all applicable export control regulations and legal requirements before procurement. Evaluate product suitability for the intended application independently, as the manufacturer reserves the right to modify specifications without notice.

Selection Notes

Select this component for designs requiring 650V blocking capability and robust short-circuit withstand time. Consider the thermal characteristics, specifically the junction-to-case resistance values, when designing heat sinks. Ensure the gate drive circuitry aligns with the specified total gate charge and threshold voltage parameters for optimal switching performance.

Part Context

This part belongs to the Alpha IGBT series from Alpha & Omega Semiconductor Inc., designed for power conversion applications. It integrates a standard N-channel IGBT structure with a monolithic anti-parallel diode. The TO-247 form factor facilitates through-hole mounting for high-power thermal management.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and electrical ratings with alternative manufacturers if cross-referencing is required.

FAQ

What is the maximum short-circuit withstand time for the AOK50B65H1?

The device can withstand a short circuit for a maximum duration of 5 microseconds under conditions where VGE=15V, VCC≤300V, and TJ≤175°C.

How does the junction temperature affect the collector-emitter saturation voltage?

The saturation voltage increases with temperature. At TJ=25°C, it is typically 1.9V, rising to 2.4V at TJ=125°C and 2.67V at TJ=175°C under standard test conditions.

What are the typical switching energy values at 175°C?

At TJ=175°C, the typical turn-on energy (Eon) is 1.92mJ, the turn-off energy (Eoff) is 0.85mJ, resulting in a total switching energy (Etotal) of 2.77mJ.