AOK60B60D1

Overview

The AOK60B60D1 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) from the Alpha IGBT series, manufactured by Alpha & Omega Semiconductor Inc. It features a collector-emitter breakdown voltage of 600 V and a maximum continuous collector current of 120 A. The device supports a pulsed collector current of 210 A and has a maximum power dissipation of 417 W. Key electrical parameters include a gate charge of 75 nC, an on-state voltage of 2.4 V at 15 V gate drive and 60 A collector current, and switching times of 32 ns (turn-on) and 74 ns (turn-off). It utilizes a TO-247-3 through-hole package and operates within a junction temperature range of -55°C to 150°C.

Feature Summary

• High current capability with 120 A continuous and 210 A pulsed collector ratings for robust power handling.
• Optimized switching performance with low turn-on and turn-off times for efficient high-frequency operation.
• Designed for through-hole mounting in the TO-247-3 package to facilitate thermal management and mechanical stability.

Applications

• Industrial motor drives and inverters
• Switched-mode power supplies (SMPS)
• Uninterruptible power supplies (UPS)

Procurement Notes

Verify component authenticity by cross-referencing the manufacturer product number AOK60B60D1 with official Alpha & Omega Semiconductor documentation. Confirm the part status, as records indicate it may be marked Not For New Designs. Ensure the specific ordering suffix matches the required packaging configuration, typically tubes for this package type, before finalizing acquisition.

Selection Notes

Select this IGBT when a 600 V rating and 120 A continuous current capacity are required in a through-hole format. Consider the 2.4 V saturation voltage and 75 nC gate charge for driver compatibility and conduction loss calculations. Evaluate the thermal resistance requirements against the 417 W maximum dissipation limit and the TO-247-3 package constraints for the intended application environment.

Part Context

The AOK60B60D1 belongs to the Alpha IGBT series from Alpha & Omega Semiconductor Inc., designed for medium-to-high power applications. It shares the base product number AOK60 with other variants in the family, differing primarily in specific electrical characteristics and packaging options. This component represents a standard discrete semiconductor solution for power conversion circuits.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source data. Verify pinout compatibility and electrical parameter equivalence with alternative 600 V, 120 A TO-247 IGBTs if sourcing this specific discontinued or limited-stock item proves difficult.

FAQ

What is the maximum collector-emitter breakdown voltage for the AOK60B60D1?

The maximum collector-emitter breakdown voltage (Vces) is 600 V.

What is the typical gate charge value for this IGBT?

The gate charge (Qg) is specified as 75 nC under test conditions of 400 V, 60 A, 5 Ohm, and 15 V.

Does the AOK60B60D1 support surface mount installation?

No, the AOK60B60D1 is designed for through-hole mounting using the TO-247-3 package.