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The AOK60B65H1 is a 650V Alpha IGBT with an integrated anti-parallel diode, housed in a TO-247 package. It supports a continuous collector current of 60A at 100°C and 120A at 25°C, with a pulsed current rating of 180A. The saturation voltage is 1.88V at 25°C and 2.34V at 125°C for IC=60A. Total gate charge is 90nC, while turn-on and turn-off energies are 2.42mJ and 1.17mJ respectively at 25°C. The device operates within a junction temperature range of -55°C to 175°C.
Verify the specific ordering suffix against official manufacturer documentation before procurement. Confirm that the requested part number matches the exact electrical characteristics and thermal ratings required for the target application. Ensure compliance with export control regulations and applicable legal requirements during the purchasing process.
Select this component based on its 650V breakdown voltage and 60A continuous current capability at elevated temperatures. Consider the low switching loss and soft recovery diode characteristics for high-frequency applications. Evaluate the thermal impedance curves to ensure adequate heat sinking for the intended power dissipation levels.
This component belongs to the Alpha IGBT series from Alpha & Omega Semiconductor Inc. It is designed for high-performance power switching applications requiring robust short-circuit withstand capability and low EMI behavior due to its optimized switching characteristics.
No public confirmed substitute part numbers are available in the provided source material.
The maximum short-circuit withstand time is 5 microseconds under conditions of VGE=15V, VCC≤300V, and TJ≤175°C.
The diode reverse recovery time (trr) is 288 ns at TJ=25°C and 465 ns at TJ=175°C, measured with IF=60A, dI/dt=200A/ms, and VCC=400V.
The total gate charge (Qg) is typically 90 nC, measured at VGE=15V, VCC=520V, and IC=60A.