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AOK8N80 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is MOSFET N-CH 800V 7.4A TO247. Review the specifications below when checking this part for your BOM.
The AOK8N80 is an N-Channel MOSFET fabricated using an advanced high voltage process. It features a Drain-Source Voltage (VDS) of 800 V and a continuous Drain Current (ID) of 7.4 A at TC=25°C. The maximum On-Resistance (RDS(on)) is 1.63 Ω at VGS=10V and ID=4A. Key electrical parameters include a Gate Threshold Voltage (VGS(th)) max of 4.5 V, Total Gate Charge (Qg) max of 32 nC, Input Capacitance (Ciss) max of 1650 pF, and Reverse Transfer Capacitance (Crss) max of 16 pF. Thermal characteristics specify a Junction-to-Case thermal resistance (RθJC) of 0.51 °C/W and a Power Dissipation (PD) of 300 W at TC=25°C. The device is housed in a TO-247 package.
Verify the specific part number suffix against official Alpha & Omega Semiconductor documentation to confirm exact specifications. Confirm RoHS compliance status and environmental classifications such as REACH and MSL ratings prior to integration. Ensure that the procurement source provides valid traceability data matching the manufacturer's product identifiers.
Select this component for offline power supply designs requiring high voltage blocking capabilities and robust avalanche energy handling. Evaluate thermal management requirements based on the specified junction-to-case thermal resistance and power dissipation limits. Consider the gate charge and threshold voltage parameters for driver compatibility in switching applications.
The AOK8N80 belongs to the AOK series of N-Channel MOSFETs from Alpha & Omega Semiconductor Inc. This series utilizes advanced high voltage processes optimized for efficiency and reliability in power conversion topologies. The TO-247 packaging facilitates effective heat dissipation for medium-power applications.
Public confirmed substitute part numbers are not available in the provided source material.
Yes, the datasheet specifies that the device undergoes 100% Unclamped Inductive Switching (UIS) testing to guarantee avalanche capability.
The maximum repetitive avalanche energy (EAR) is rated at 2 mJ at TC=25°C.
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