AOM015V75X2Q

$24.06

Description：750V SILICON CARBIDE MOSFET
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tube

SKU:694513b8d9b2 Category: Single FETs, MOSFETs Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

AOM015V75X2Q is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is 750V SILICON CARBIDE MOSFET. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AOM015V75X2Q

Description：750V SILICON CARBIDE MOSFET
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tube
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：750 V
Current - Continuous Drain (Id) @ 25°C：96A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：15V
Rds On (Max) @ Id, Vgs：22mOhm @ 24A, 15V
Vgs(th) (Max) @ Id：3.5V @ 24mA
Gate Charge (Qg) (Max) @ Vgs：152 nC @ 15 V
Vgs (Max)：+15V, -5V
Input Capacitance (Ciss) (Max) @ Vds：4880 pF @ 400 V
FET Feature：-
Power Dissipation (Max)：312W (Tj)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Through Hole
Supplier Device Package：TO-247-4L
Package / Case：TO-247-4

Single FETs, MOSFETs datasheet and documents for AOM015V75X2Q

AOM015V75X2Q

Single FETs, MOSFETs Overview

The AOM015V75X2Q is a 750 V αSiC Silicon Carbide Power MOSFET in a TO-247-4L package. It features a typical RDS(ON) of 15 mΩ at VGS = 15 V and ID = 24 A, with a maximum of 22 mΩ at 25°C. The device supports a continuous drain current of 96 A at TC = 25°C and a pulsed current of 200 A. Key dynamic parameters include a total gate charge (Qg) of 152 nC, input capacitance (Ciss) of 4880 pF, and body diode reverse recovery charge (Qrr) of 211 nC. Thermal resistance from junction to case (RθJC) is 0.48 °C/W.

Single FETs, MOSFETs Feature Summary

Utilizes proprietary αSiC MOSFET technology for optimized high-frequency switching performance.
Features low on-resistance and low gate charge to minimize conduction and switching losses.
Incorporates an integrated body diode with low reverse recovery charge (Qrr).
Designed for operation with an optimized gate drive voltage of +15 V.

Single FETs, MOSFETs Applications

xEV Charger
Electric Vehicle Supply Equipment (EVSE)
Motor Drives
Automotive Inverters

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix 'Q' corresponds to the tube shipping configuration containing 30 units per tube. Confirm that the component meets RoHS compliance standards as indicated in the datasheet documentation. Ensure the procurement channel provides valid traceability for automotive-grade silicon carbide components.

Single FETs, MOSFETs Selection Notes

Select this component for high-voltage applications requiring efficient thermal management and fast switching speeds. The TO-247-4L package facilitates robust mounting to heatsinks. Consider the 15 V gate drive requirement when designing the driver circuitry. Evaluate the 200 A pulsed current capability against peak load demands in the target system.

Single FETs, MOSFETs Part Context

This part belongs to Alpha & Omega Semiconductor's αSiC product line, utilizing silicon carbide material for superior power handling compared to traditional silicon devices. The TO-247-4L package is standard for high-power discrete semiconductors, providing a large drain tab for thermal dissipation and four terminals for source connection.

Single FETs, MOSFETs Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and electrical ratings if considering alternative manufacturers' silicon carbide MOSFETs.