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AOM033V120X2Q is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is 1200V SILICON CARBIDE MOSFET. Review the specifications below when checking this part for your BOM.
The AOM033V120X2Q is a 1200 V αSiC Silicon Carbide Power MOSFET from Alpha & Omega Semiconductor. It features a typical RDS(ON) of 33 mΩ at 15 V gate drive and supports a pulsed drain current (IDM) of 120 A. The device utilizes an optimized TO-247-4L package with a Kelvin source pin to minimize parasitic inductance, enabling high-frequency switching. It is qualified under the AEC-Q101 automotive standard and operates within a junction temperature range of -55°C to 175°C.
Verify component authenticity through authorized distribution channels or direct manufacturer engagement. Confirm that the specific order matches the AOM033V120X2Q designation and TO-247-4L form factor. Ensure compliance with applicable export control regulations and legal requirements prior to procurement.
Select this component for designs requiring high-voltage silicon carbide performance with automotive reliability standards. The 15 V gate drive voltage ensures compatibility with standard drivers. The four-terminal TO-247-4L package is suitable for applications demanding low parasitic inductance and efficient thermal management up to 175°C.
This part belongs to the αSiC MOSFET product line from Alpha & Omega Semiconductor. It represents a silicon carbide power switch designed to replace traditional silicon devices in high-efficiency power conversion systems. The TO-247-4L packaging provides a standardized footprint for high-power thermal dissipation.
Public confirmed substitute part numbers are not available in the provided documentation.
The maximum transient gate-source voltage (VGS,OP,TRANS) is +20 V.
Yes, the datasheet confirms 100% UIS testing with a single pulsed avalanche energy rating of 1000 mJ.
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