Single FETs, MOSFETs AOM060V65X2 product image

AOM060V65X2

$8.65
  • Description:650V SILICON CARBIDE MOSFET
  • Series:-
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tube

SKU:fe6a7591bd08 Category: Brand:

  
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AOM060V65X2 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is 650V SILICON CARBIDE MOSFET. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AOM060V65X2

  • Description:650V SILICON CARBIDE MOSFET
  • Series:-
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tube
  • FET Type:N-Channel
  • Technology:SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss):650 V
  • Current - Continuous Drain (Id) @ 25°C:29A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):15V
  • Rds On (Max) @ Id, Vgs:80mOhm @ 6A, 15V
  • Vgs(th) (Max) @ Id:3.5V @ 6mA
  • Gate Charge (Qg) (Max) @ Vgs:39.4 nC @ 15 V
  • Vgs (Max):+15V, -5V
  • Input Capacitance (Ciss) (Max) @ Vds:1165 pF @ 400 V
  • FET Feature:-
  • Power Dissipation (Max):103W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-247-4L
  • Package / Case:TO-247-4

Single FETs, MOSFETs datasheet and documents for AOM060V65X2

AOM060V65X2

Single FETs, MOSFETs Overview

The AOM060V65X2 is a 650V αSiC Silicon Carbide Power MOSFET in a TO-247-4L package. It features a maximum continuous drain current of 32A at 25°C and a pulsed current of 90A. The typical on-resistance is 60mΩ, with a total gate charge of 39.4nC. The device exhibits an ultra-fast reverse recovery time of 11ns and a reverse recovery charge of 51nC. It supports a junction temperature up to 175°C and includes 100% UIS testing.

Single FETs, MOSFETs Feature Summary

  • Utilizes proprietary αSiC technology for low on-resistance increase with temperature
  • Features fast switching capabilities with low gate resistance and capacitance
  • Includes an optimized gate drive voltage requirement of 15V
  • Provides ultra-fast body diode reverse recovery characteristics

Single FETs, MOSFETs Applications

  • Power Supplies
  • Energy Storage Systems
  • EV Charging Infrastructure
  • Uninterruptible Power Supplies (UPS)
  • Solar Inverters
  • Industrial Motor Drives

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix matches the required shipping quantity and form factor. Confirm that the TO-247-4L pin configuration aligns with the target PCB land pattern design. Ensure thermal management solutions accommodate the specified junction-to-case thermal resistance limits for the intended operating environment.

Single FETs, MOSFETs Selection Notes

Select this component for high-frequency applications requiring low switching losses and robust avalanche energy handling. Evaluate the thermal derating curves against the expected case temperatures to ensure safe operation within the 175°C junction limit. Consider the 15V gate drive requirement when designing the driver circuit interface.

Single FETs, MOSFETs Part Context

This part belongs to Alpha & Omega Semiconductor's αSiC product line, designed for high-efficiency power conversion. It serves as a silicon carbide alternative to traditional silicon MOSFETs, offering superior performance in high-voltage and high-temperature environments compared to standard silicon devices.

Single FETs, MOSFETs Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.

Single FETs, MOSFETs FAQ

What is the maximum junction temperature rating?

The maximum junction and storage temperature range is -55°C to 175°C.

Is the device tested for unclamped inductive switching?

Yes, the datasheet confirms that the device undergoes 100% UIS testing.

What is the recommended operating gate-source voltage?

The recommended operating gate-source voltage is -5V to +15V.

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