AOM060V75X2Q

$9.96

Description：750V SILICON CARBIDE MOSFET
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tube

SKU:6cd411b451dd Category: Single FETs, MOSFETs Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

AOM060V75X2Q is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is 750V SILICON CARBIDE MOSFET. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AOM060V75X2Q

Description：750V SILICON CARBIDE MOSFET
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tube
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：750 V
Current - Continuous Drain (Id) @ 25°C：29A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：15V
Rds On (Max) @ Id, Vgs：80mOhm @ 6A, 15V
Vgs(th) (Max) @ Id：3.5V @ 6mA
Gate Charge (Qg) (Max) @ Vgs：39.4 nC @ 15 V
Vgs (Max)：+15V, -5V
Input Capacitance (Ciss) (Max) @ Vds：1165 pF @ 400 V
FET Feature：-
Power Dissipation (Max)：103W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Through Hole
Supplier Device Package：TO-247-4L
Package / Case：TO-247-4

Single FETs, MOSFETs datasheet and documents for AOM060V75X2Q

AOM060V75X2Q

Single FETs, MOSFETs Overview

The AOM060V75X2Q is a 750V αSiC Silicon Carbide Power MOSFET from Alpha & Omega Semiconductor. It features a TO-247-4L package and operates within a junction temperature range of -55°C to 175°C. The device has a maximum drain-source voltage (VDS) of 750V, a continuous drain current (ID) of 32A at 25°C case temperature, and a pulsed drain current (IDM) of 90A. Typical on-resistance (RDS(ON)) is 60mΩ at VGS = 15V and TJ = 25°C. Switching characteristics include a total gate charge (Qg) of 39.4nC, turn-on energy (Eon) of 41µJ, and turn-off energy (Eoff) of 10µJ at VDS = 400V and ID = 20A. Body diode reverse recovery charge (Qrr) is 51nC.

Single FETs, MOSFETs Feature Summary

Utilizes proprietary αSiC MOSFET technology for low conduction loss and fast switching performance.
Optimized for an operating gate drive voltage of +15V with a recommended transient limit of +20V.
Features low body diode reverse recovery charge (Qrr) and optimized gate resistance for efficient operation.
AEC-Q101 automotive qualified and subjected to 100% Unclamped Inductive Switching (UIS) testing.

Single FETs, MOSFETs Applications

xEV Charger
Electric Vehicle Supply Equipment (EVSE)
Motor Drives
Automotive Inverters

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering part number against the manufacturer's datasheet to ensure correct package type and shipping quantity specifications. Confirm that the component meets all required electrical parameters for the intended application before procurement. Ensure compliance with applicable legal requirements and export control rules during acquisition.

Single FETs, MOSFETs Selection Notes

Select this component for high-voltage applications requiring low switching losses and high thermal stability. Consider the 750V rating and 32A continuous current capability when designing power stages. Evaluate the thermal resistance and derating curves to ensure adequate heat dissipation for the target operating conditions.

Single FETs, MOSFETs Part Context

This silicon carbide power MOSFET belongs to the αSiC series designed for demanding power conversion environments. It integrates advanced trench technology to minimize both conduction and switching losses. The device is engineered to support high-frequency operations while maintaining robust avalanche energy handling capabilities.