Single FETs, MOSFETs AOM065V120X2 product image

AOM065V120X2

$12.33
  • Description:1200V SILICON CARBIDE MOSFET
  • Series:-
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tube

SKU:62ab4b043cd7 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

AOM065V120X2 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is 1200V SILICON CARBIDE MOSFET. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AOM065V120X2

  • Description:1200V SILICON CARBIDE MOSFET
  • Series:-
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tube
  • FET Type:N-Channel
  • Technology:SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss):1200 V
  • Current - Continuous Drain (Id) @ 25°C:40.3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):15V
  • Rds On (Max) @ Id, Vgs:85mOhm @ 10A, 15V
  • Vgs(th) (Max) @ Id:3.5V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs:62.3 nC @ 15 V
  • Vgs (Max):+18V, -8V
  • Input Capacitance (Ciss) (Max) @ Vds:1716 pF @ 800 V
  • FET Feature:-
  • Power Dissipation (Max):187.5W (Tj)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-247-4L
  • Package / Case:TO-247-4

Single FETs, MOSFETs datasheet and documents for AOM065V120X2

AOM065V120X2

Single FETs, MOSFETs Overview

The AOM065V120X2 is a 1200 V αSiC Silicon Carbide Power MOSFET manufactured by Alpha & Omega Semiconductor Inc. It utilizes proprietary αSiC technology to deliver low loss and fast switching speeds with low gate resistance (RG). The device features an optimized drive voltage of 15 V for broad driver compatibility and includes a robust body diode with low reverse recovery charge (Qrr). Key electrical parameters include a maximum drain-source voltage (VDS) of 1200 V, a typical on-resistance (RDS(ON)) of 65 mΩ at 15 V, and a pulsed drain current (IDM) of 85 A. It is rated for a continuous drain current of 40.3 A at 25°C and operates within a junction temperature range of -55°C to 175°C.

Single FETs, MOSFETs Feature Summary

  • Proprietary αSiC MOSFET technology enabling low loss and fast switching speeds
  • Optimized drive voltage (VGS = 15 V) designed for broad driver compatibility
  • Robust body diode characteristics with low reverse recovery charge (Qrr)
  • 100% Unclamped Inductive Switching (UIS) tested for enhanced reliability

Single FETs, MOSFETs Applications

  • EV Chargers
  • Solar Inverters
  • Motor Drives
  • UPS Systems
  • SMPS

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering part number AOM065V120X2 against the manufacturer's datasheet Rev. 1.2 to ensure correct package type and shipping quantity. Confirm that the TO-247-4L tube packaging aligns with assembly requirements. Cross-reference RoHS compliance status and check for any recent Product Change Notifications (PCN) regarding design or subcontractor changes before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component for high-voltage applications requiring efficient power conversion. The 1200 V rating and low RDS(ON) make it suitable for demanding environments. Ensure the driving circuit supports the recommended 15 V operating voltage. Consider the thermal management capabilities, specifically the junction-to-case thermal resistance, when designing heatsinking solutions for continuous operation near the maximum temperature limits.

Single FETs, MOSFETs Part Context

This silicon carbide MOSFET belongs to Alpha & Omega Semiconductor's portfolio of wide bandgap power devices. The company integrates discrete semiconductor process technology with advanced packaging to develop high-performance power management solutions. This specific part targets high-volume applications in renewable energy, industrial motor controls, and automotive electronics, leveraging αSiC technology for superior efficiency compared to traditional silicon devices.

Single FETs, MOSFETs Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Verify pinout compatibility and electrical ratings if considering alternative manufacturers' components for direct replacement.

Single FETs, MOSFETs FAQ

What is the recommended operating gate-source voltage?

The recommended operating gate-source voltage is -5 V to +15 V.

Is the device tested for unclamped inductive switching?

Yes, the AOM065V120X2 is 100% UIS tested.

What is the maximum junction temperature?

The maximum junction temperature is 175°C.

AOM065V120X2AOM065V120X2
$12.33
Buy Now