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AON2392 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is MOSFET N-CHANNEL 100V 8A 8DFN. Review the specifications below when checking this part for your BOM.
The AON2392 is a 100V N-Channel AlphaSGT Trench Power MOSFET manufactured by Alpha & Omega Semiconductor Inc. It features low on-resistance and logic-level drive capability in a DFN 2x2C package. Key electrical parameters include a drain-source voltage (VDS) of 100V, continuous drain current (ID) of 8A at VGS=10V, and maximum RDS(ON) values of less than 32mΩ at VGS=10V and 39mΩ at VGS=4.5V. The device supports a maximum junction temperature of 150°C and includes a body diode with a continuous current rating of 5A.
Verify the specific ordering suffix and package form factor against the manufacturer's official documentation before procurement. Confirm that the component meets all required environmental standards and packaging specifications for the intended manufacturing process. Ensure availability aligns with project timelines as supply conditions may vary.
Select this component based on its 100V breakdown voltage and 8A continuous current capacity. Consider the thermal resistance characteristics and the low on-resistance requirements for the specific operating voltage levels. Evaluate the package size constraints and ensure the logic drive voltage matches the system's control signals.
This part belongs to the AlphaSGT series of power MOSFETs from Alpha & Omega Semiconductor Inc., which focuses on high-performance trench technology solutions. The company provides a broad range of power semiconductors including MOSFETs, IGBTs, and power ICs designed for various consumer and industrial applications.
No public substitute part numbers are documented in the provided source material.
The maximum continuous drain current is 8A when measured at a gate-source voltage of 10V.
Yes, the datasheet specifies that the device is logic driven, with an on-resistance of less than 39mΩ at a gate-source voltage of 4.5V.
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