AON2802

Description：MOSFET 2N-CH 30V 2A 6DFN
Series：-

SKU:743bb1c840f8 Category: FET, MOSFET Arrays Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 30V 2A 6DFN
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：2A
Rds On (Max) @ Id, Vgs：60mOhm @ 2A, 10V
Vgs(th) (Max) @ Id：1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：10nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：245pF @ 15V
Power - Max：2.1W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：6-WDFN Exposed Pad
Supplier Device Package：6-DFN (2x2)
Grade：-
Qualification：-

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AON2802

Overview

The AON2802 is a dual N-channel enhancement mode MOSFET from Alpha & Omega Semiconductor, housed in a DFN 2x2 package. It features a drain-source voltage of 30V and a continuous drain current of 2A at 25°C. The device offers low on-resistance, specified as less than 60mΩ at VGS=10V, 68mΩ at VGS=4.5V, and 88mΩ at VGS=2.5V. Key electrical parameters include a gate threshold voltage of 1.05V typical, total gate charge of 10nC at 10V, and input capacitance of 245pF. Thermal characteristics define a maximum junction temperature of 150°C and a junction-to-ambient thermal resistance of 100°C/W.

Feature Summary

Dual configuration with advanced trench technology for extremely low on-resistance
Suitable for load switch and battery protection applications
Features typical ESD protection rated at HBM Class 3

Applications

Load switching circuits
Battery protection systems

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official datasheet to ensure correct packaging and tape-and-reel specifications. Confirm that the component meets all required RoHS compliance standards for your target market. Ensure the supplier provides valid traceability documentation matching the Alpha & Omega Semiconductor part number to avoid counterfeit risks during assembly.

Selection Notes

Select this component when a compact dual N-channel solution is required for low-voltage power management. The DFN 2x2 package supports space-constrained designs while maintaining adequate thermal performance for 2A continuous operation. Evaluate the gate drive voltage requirements against the RDS(ON) curves to ensure optimal efficiency at your specific operating conditions.

Part Context

This dual MOSFET belongs to Alpha & Omega Semiconductor's portfolio of surface-mount power devices designed for portable electronics and consumer applications. The DFN 2x2 form factor represents a high-density packaging option compared to traditional leaded packages, allowing for increased circuit board real estate efficiency in modern compact electronic devices.