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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 4.5A 6DFN
- Series：AlphaMOS
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：4.5A
- Rds On (Max) @ Id, Vgs：37mOhm @ 2A, 10V
- Vgs(th) (Max) @ Id：1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：10nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：235pF @ 15V
- Power - Max：2.5W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-UDFN Exposed Pad
- Supplier Device Package：6-DFN (2x2)
- Grade：-
- Qualification：-
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Overview
The AON2812 is a dual N-channel AlphaMOS (αMOS LV) trench power MOSFET in a DFN 2x2 package. It features a drain-source voltage of 30V and a continuous drain current of 4.5A at VGS=10V. The on-resistance is less than 37mΩ at VGS=10V, less than 45mΩ at VGS=4.5V, and less than 70mΩ at VGS=2.5V. Typical ESD protection meets HBM Class 3A standards. The device supports a junction temperature range from -55°C to 150°C.
Feature Summary
- Utilizes Trench Power AlphaMOS technology for low on-resistance and gate charge.
- Includes built-in ESD protection compliant with HBM Class 3A.
Applications
- Battery protection switch
- Mobile device battery charging and discharging
- Load switch
Procurement Notes
Verify the specific ordering suffix against official Alpha & Omega Semiconductor documentation to confirm package type and reel specifications. Ensure compliance with RoHS and halogen-free requirements as stated in the datasheet. Confirm availability through authorized distributors, as standard packaging details may vary by region or production batch.
Selection Notes
Select this component for applications requiring a compact dual N-channel configuration with low RDS(ON) across various gate voltages. Evaluate thermal performance based on the specific PCB copper area and airflow conditions, as junction-to-ambient resistance depends heavily on board design. Verify that the 30V rating and 4.5A current capacity meet the circuit's peak and steady-state requirements.
Part Context
The AON2812 belongs to the AlphaMOS LV series, designed for low-voltage switching applications. It integrates two independent N-channel MOSFETs into a single DFN 2x2 footprint, optimizing space for portable electronics. This family emphasizes efficiency through reduced conduction losses and fast switching speeds.
Replacement Considerations
No public confirmed substitute part numbers are available in the provided documentation.
FAQ
What is the maximum pulsed drain current?
The maximum pulsed drain current is 30A.
What is the typical total gate charge at VGS=10V?
The typical total gate charge (Qg) at VGS=10V is 4.5 nC.
What is the reverse recovery time of the body diode?
The typical reverse recovery time (trr) is 7.2 ns when IF=2A and dI/dt=100A/ms.
