AON2880

Overview

The AON2880 is a dual N-channel MOSFET array manufactured by Alpha & Omega Semiconductor Inc. It features a 20V drain-source voltage (Vdss) and a continuous drain current (Id) of 7A at 25°C. The device utilizes an 8-DFN-EP (2x2) surface-mount package with a maximum power dissipation of 2W. Key electrical characteristics include a gate charge (Qg) of 14nC at 4.5V, an input capacitance (Ciss) of 1295pF at 10V, and a logic-level gate feature for efficient driving.

Feature Summary

• Dual N-channel configuration with common drain topology
• Logic level gate operation for direct microcontroller interfacing
• Compact 8-DFN-EP surface mount package design

Applications

• Low voltage DC-DC converter circuits
• Battery protection modules
• Power management IC load switches

Procurement Notes

Verify component authenticity through authorized distribution channels due to the part's obsolete status. Confirm that the received units match the original Alpha & Omega Semiconductor specifications, as end-of-life products may have limited availability or require careful handling during procurement processes to ensure supply chain integrity.

Selection Notes

Select this component for applications requiring a compact dual N-channel solution with low voltage ratings. The logic level gate characteristic simplifies drive circuit design. Ensure the thermal requirements align with the 2W power dissipation limit in the 8-DFN-EP package, considering the specific ambient temperature conditions of the target application environment.

Part Context

This component belongs to the Alpha & Omega Semiconductor discrete semiconductor product line, specifically within the FET and MOSFET arrays category. It is designed for surface-mount technology applications. The manufacturer has designated this part as obsolete, indicating it is no longer actively produced for new designs.

Replacement Considerations

• AON2880TR