AON3810

AON3810

$0.16
  • Description:MOSFET 2N-CH 20V 8DFN
  • Series:-

SKU:53a46115b629 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2N-CH 20V 8DFN
  • Series:-
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual) Common Drain
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):20V
  • Current - Continuous Drain (Id) @ 25°C:-
  • Rds On (Max) @ Id, Vgs:24mOhm @ 7A, 10V
  • Vgs(th) (Max) @ Id:1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:5.2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:280pF @ 10V
  • Power - Max:2.5W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SMD, Flat Leads
  • Supplier Device Package:8-DFN (3x3)
  • Grade:-
  • Qualification:-

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AON3810

Overview

The AON3810 is a dual N-channel MOSFET array manufactured by Alpha & Omega Semiconductor Inc. It features a 20V drain-source voltage (VDS) and an 8.5A continuous drain current (ID). The device utilizes advanced trench technology to achieve low on-resistance, with RDS(ON) values below 24mΩ at VGS=10V, 28mΩ at VGS=4.5V, 39mΩ at VGS=2.5V, and 55mΩ at VGS=1.8V. Packaged in a DFN 3x3 surface-mount format, it includes integrated 1.6kΩ gate resistors for each channel. Key dynamic parameters include a total gate charge (Qg) of 5.2nC and an input capacitance (Ciss) of 280pF. The component supports junction temperatures up to 150°C and offers ESD protection rated at 2000V HBM.

Feature Summary

  • Dual common-drain configuration suitable for uni-directional or bi-directional load switching applications
  • Advanced trench technology enabling operation with gate voltages as low as 1.8V while maintaining a 12V maximum gate-source rating
  • Integrated 1.6kΩ gate resistors per channel to facilitate circuit stability and reduce ringing
  • ESD protected design with a 2000V Human Body Model rating

Applications

  • Uni-directional load switches
  • Bi-directional load switches
  • Power management circuits requiring low gate drive voltage

Procurement Notes

Verify the specific package marking and date code against the manufacturer's latest documentation before integration. Confirm that the application environment remains within the specified thermal limits, particularly regarding the steady-state junction-to-ambient thermal resistance. Ensure that the 12V maximum gate-source voltage constraint is strictly observed during system operation to prevent device degradation.

Selection Notes

Select this component when a compact dual N-channel solution is required for low-voltage power switching. The low RDS(ON) at VGS=1.8V makes it appropriate for systems driven by low-power logic controllers. Consider the DFN 3x3 footprint constraints and verify that the PCB copper area can adequately dissipate heat, as the thermal performance depends heavily on the board layout and ambient conditions.

Part Context

The AON3810 belongs to the Alpha & Omega Semiconductor dual MOSFET array family. It shares the DFN 3x3 package form factor with other devices in the series but is distinct due to its specific 20V voltage rating and integrated gate resistor configuration. This part is designed primarily for consumer market applications where space efficiency and low drive voltage compatibility are critical design factors.

Replacement Considerations

Public confirmed substitute part numbers: None available.

AON3810AON3810
$0.16
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