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AON4407 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is MOSFET P-CH 12V 9A 8DFN. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for AON4407
- Description：MOSFET P-CH 12V 9A 8DFN
- Series：-
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：12 V
- Current - Continuous Drain (Id) @ 25°C：9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.5V, 4.5V
- Rds On (Max) @ Id, Vgs：20mOhm @ 9A, 4.5V
- Vgs(th) (Max) @ Id：850mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：23 nC @ 4.5 V
- Vgs (Max)：±8V
- Input Capacitance (Ciss) (Max) @ Vds：2100 pF @ 6 V
- FET Feature：-
- Power Dissipation (Max)：2.5W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-DFN (3x2)
- Package / Case：8-SMD, Flat Leads
Single FETs, MOSFETs datasheet and documents for AON4407
Single FETs, MOSFETs Overview
The AON4407 is a P-Channel Enhancement Mode Field Effect Transistor manufactured by Alpha & Omega Semiconductor. It utilizes advanced trench technology to deliver low on-resistance and gate charge, supporting operation with gate voltages as low as 1.8V. The device features a drain-source voltage of -12V and a continuous drain current of -9A at VGS = -4.5V. Key electrical parameters include an on-resistance of less than 20mΩ at VGS = -4.5V, 25mΩ at VGS = -2.5V, and 31mΩ at VGS = -1.8V. It is housed in a DFN 3x2 package.
Single FETs, MOSFETs Feature Summary
- Advanced trench technology for excellent on-resistance performance
- Low gate charge characteristics
- Compatible with gate drive voltages as low as 1.8V
- ESD protected structure
Single FETs, MOSFETs Applications
- Load switch applications
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to confirm exact specifications and packaging details. Ensure compliance with applicable legal requirements, including export control regulations. Evaluate product suitability for intended applications prior to procurement.
Single FETs, MOSFETs Selection Notes
Select this component for designs requiring a P-channel MOSFET with low gate drive voltage compatibility down to 1.8V. Consider the thermal characteristics and package type when designing for power dissipation limits. Verify that the -12V drain-source voltage rating meets the circuit requirements.
Single FETs, MOSFETs Part Context
This part belongs to the Alpha & Omega Semiconductor portfolio of power management solutions. It is designed for consumer market applications utilizing trench MOSFET technology. The device is qualified for general use but is not authorized for life support devices or systems without explicit authorization.
Single FETs, MOSFETs Replacement Considerations
Consult official substitution lists from Alpha & Omega Semiconductor for verified alternatives. Cross-reference pinouts, electrical ratings, and package dimensions before implementation.
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