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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 7.2A 6DFN
- Series：-
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual) Common Drain
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：7.2A
- Rds On (Max) @ Id, Vgs：19mOhm @ 7A, 4.5V
- Vgs(th) (Max) @ Id：1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：24nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：1150pF @ 15V
- Power - Max：1.6W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-WFDFN Exposed Pad
- Supplier Device Package：6-DFN-EP (2x5)
- Grade：-
- Qualification：-
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Overview
The AON5802B is a dual N-channel enhancement mode MOSFET in a DFN 2x5 package. It features a drain-source voltage (VDS) of 30V and a continuous drain current (ID) of 7.2A at VGS=4.5V. The on-resistance (RDS(ON)) is less than 19mΩ at VGS=4.5V, 20mΩ at VGS=4.0V, 23mΩ at VGS=3.1V, and 30mΩ at VGS=2.5V. Maximum gate-source voltage is ±12V. Gate charge (Qg) is typically 17.5nC at VGS=10V and 7.5nC at VGS=4.5V. Input capacitance (Ciss) is 1150pF. Thermal resistance junction-to-case (RθJC) is 75°C/W, and junction-to-ambient (RθJA) is 140°C/W.
Feature Summary
- Common-drain configuration facilitates uni-directional or bi-directional load switch applications.
- Advanced trench technology provides low gate charge and operation with gate voltages as low as 2.5V.
- Includes typical ESD protection rated at HBM Class 3A.
Applications
- Uni-directional load switching
- Bi-directional load switching
Procurement Notes
Verify the specific datasheet revision and manufacturing date code upon procurement. Confirm that the component meets the required thermal dissipation standards for the intended application environment. Ensure compatibility with the target PCB footprint for the DFN 2x5 package. Check for any end-of-life notices or alternative part recommendations from the manufacturer.
Selection Notes
Select this component when a dual N-channel MOSFET with a 30V rating and common-drain topology is required. Consider the RDS(ON) values at various gate voltages to ensure efficient switching at the target drive level. Evaluate the thermal performance based on the specific board copper area and airflow conditions, as RθJA varies significantly with layout.
Part Context
The AON5802B belongs to Alpha & Omega Semiconductor's portfolio of dual N-channel MOSFETs designed for consumer electronics. It utilizes advanced trench technology to achieve low on-resistance and fast switching speeds within a compact DFN 2x5 package. This series is optimized for applications requiring efficient power management in space-constrained designs.
Replacement Considerations
No public confirmed substitute part numbers are available in the provided documentation.
FAQ
What is the maximum gate-source voltage rating?
The maximum gate-source voltage (VGS) is ±12V.
How does the on-resistance vary with gate voltage?
RDS(ON) is less than 19mΩ at VGS=4.5V, 20mΩ at VGS=4.0V, 23mΩ at VGS=3.1V, and 30mΩ at VGS=2.5V.
Is the device suitable for high-voltage applications?
No, the AON5802B has a maximum drain-source voltage (VDS) of 30V and is designed for low-voltage consumer applications.
