AON5810

Description：MOSFET 2N-CH 20V 7.7A 6DFN
Series：-

SKU:f265b36ec74c Category: FET, MOSFET Arrays Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 20V 7.7A 6DFN
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual) Common Drain
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：20V
Current - Continuous Drain (Id) @ 25°C：7.7A
Rds On (Max) @ Id, Vgs：18mOhm @ 7.7A, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：13.1nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：1360pF @ 10V
Power - Max：1.6W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：6-WFDFN Exposed Pad
Supplier Device Package：6-DFN-EP (2x5)
Grade：-
Qualification：-

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AON5810

Overview

The AON5810 is a dual N-Channel MOSFET manufactured by Alpha & Omega Semiconductor Inc. It features a common drain configuration and logic level gate operation. The device supports a drain-source voltage of 20V and a continuous drain current of 7.7A. Key electrical parameters include an on-resistance of 18mΩ at 7.7A with a 4.5V gate drive, a threshold voltage of 1V at 250µA, and a maximum gate charge of 13.1nC at 4.5V. The component is housed in a 6-DFN-EP package.

Feature Summary

Dual N-Channel configuration with common drain topology
Logic level gate design for direct microcontroller interfacing
Low on-resistance characteristics optimized for power efficiency

Applications

DC-DC converter circuits
Power management systems
Motor control applications

Procurement Notes

Verify the manufacturer part number against official Alpha & Omega Semiconductor documentation to ensure authenticity. Confirm that the received components match the specified 6-DFN-EP package dimensions and pinout. Check datasheets for specific lot markings and compliance certifications required for your manufacturing process.

Selection Notes

Select this component when a dual N-Channel MOSFET with low voltage ratings and logic level compatibility is required. Consider the 18mΩ on-resistance for thermal management in high-current paths. Ensure the 20V drain-source voltage rating exceeds the maximum circuit operating voltage to maintain reliability.

Part Context

This component belongs to the MOSFET array category within Alpha & Omega Semiconductor's discrete semiconductor portfolio. It is designed for surface-mount applications requiring compact footprints. The dual configuration allows for efficient implementation of half-bridge or synchronous rectifier topologies in space-constrained designs.