AON6210

Single FETs, MOSFETs Overview

The AON6210 is an N-channel Power MOSFET manufactured by Alpha & Omega Semiconductor Inc. It features a drain-source voltage (Vdss) of 30 V and a continuous drain current (Id) of 45 A at 25°C case temperature. The device utilizes an 8-DFN (5x6 mm) surface-mount package with a thermal pad. Key electrical parameters include a maximum gate-source voltage (Vgs) of ±20 V, a threshold voltage (Vgs(th)) of 2.5 V at 250 µA, and a maximum gate charge (Qg) of 72 nC at 10 V. The on-resistance (Rds(on)) is specified at 3.6 mΩ when tested at 20 A and 10 V. The component operates within a junction temperature range of -55°C to 150°C.

Single FETs, MOSFETs Feature Summary

• High current handling capability suitable for power distribution applications
• Low on-resistance for efficient power conversion
• Surface-mount design optimized for thermal performance

Single FETs, MOSFETs Applications

• Power distribution circuits
• Load switches
• DC-DC converter output stages

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against the manufacturer's official datasheet to ensure correct packaging and tape-and-reel specifications. Confirm that the requested part number matches the exact pinout and thermal characteristics required for the target PCB layout. Cross-reference the date code and lot traceability if the application demands strict quality control standards.

Single FETs, MOSFETs Selection Notes

Select this component based on the 30 V voltage rating and 45 A current capacity requirements. Ensure the thermal management solution supports the 83 W (Tc) power dissipation rating. Verify that the driving circuit can provide sufficient gate voltage to achieve the low Rds(on) specification. Consider the 8-DFN package dimensions for footprint compatibility.

Single FETs, MOSFETs Part Context

The AON6210 belongs to the AON62 series of N-channel MOSFETs from Alpha & Omega Semiconductor. This series focuses on high-performance power switching solutions using advanced silicon processes. The devices are designed for applications requiring low conduction losses and robust reliability in compact form factors.

Single FETs, MOSFETs Replacement Considerations

Consult the manufacturer's cross-reference tool for verified equivalent parts. Ensure any substitute maintains identical voltage, current, and package specifications. Validate thermal resistance values before implementation.