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AON6298 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is MOSFET N-CH 100V 14.5A/46A 8DFN. Review the specifications below when checking this part for your BOM.
The AON6298 is a 100V N-Channel MOSFET utilizing trench technology optimized for high-frequency switching. It features a maximum continuous drain current of 46A and a gate-source voltage rating of ±20V. The device offers an on-resistance of less than 16.5mΩ at VGS=10V and less than 21mΩ at VGS=6V. Thermal characteristics include a junction-to-case resistance of 1.6°C/W and a junction-to-ambient resistance of 55°C/W. The component supports a maximum junction temperature of 150°C and has been tested for 100% UIS and Rg.
Verify the specific package variant and manufacturing revision against the official Alpha & Omega Semiconductor datasheet before procurement. Confirm that the intended application environment aligns with the specified thermal derating curves and absolute maximum ratings. Ensure compliance with export control regulations and legal requirements applicable to your region prior to ordering.
Select this component when designing circuits requiring efficient high-frequency switching performance in consumer, telecom, or industrial power applications. Consider the low on-resistance and fast switching times for synchronous rectifier designs. Evaluate the thermal management strategy based on the provided junction-to-case and junction-to-ambient resistance values to ensure operation within the 150°C maximum junction temperature limit.
The AON6298 belongs to the Alpha & Omega Semiconductor lineup of N-Channel MOSFETs. It is part of their portfolio focused on power management solutions for various electronic systems. The device utilizes advanced trench technology to deliver optimized efficiency for modern power supply architectures.
No public substitute part numbers are documented in the provided source material.
The maximum continuous drain current is 46A.
Yes, the device uses trench MOSFET technology uniquely optimized to provide efficient high-frequency switching performance by minimizing both conduction and switching power losses.
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