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AON6482 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is MOSFET N-CH 100V 5.5A/28A 8DFN. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for AON6482
- Description：MOSFET N-CH 100V 5.5A/28A 8DFN
- Series：-
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：5.5A (Ta), 28A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：37mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：2.7V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：44 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2000 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：2.5W (Ta), 63W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-DFN (5x6)
- Package / Case：8-PowerSMD, Flat Leads
Single FETs, MOSFETs datasheet and documents for AON6482
Single FETs, MOSFETs Overview
The AON6482 is a 100V N-Channel MOSFET utilizing advanced trench technology for low on-resistance. It features a maximum drain-source voltage of 100V and continuous drain current ratings of 28A at 25°C case temperature and 20A at 70°C case temperature. The device offers an on-resistance of less than 37mΩ at VGS=10V and less than 42mΩ at VGS=4.5V. It includes 100% UIS testing, operates within a junction temperature range of -55°C to 175°C, and utilizes an 8-pin DFN5x6 package.
Single FETs, MOSFETs Feature Summary
- Advanced trench MOSFET technology combined with a low resistance package to provide extremely low RDS(ON).
- 100% Unclamped Inductive Switching (UIS) tested for enhanced reliability under inductive load conditions.
- 100% Gate Resistance (Rg) tested to ensure consistent switching performance and drive characteristics.
Single FETs, MOSFETs Applications
- Boost converters
- Synchronous rectifiers
- Consumer power supplies
- Telecom power supplies
- Industrial power supplies
- LED backlighting
Single FETs, MOSFETs Procurement Notes
Verify the specific revision status and datasheet version before procurement, as thermal parameters like RqJA depend on board design. Confirm that the application environment supports the specified junction temperature limits. Ensure compatibility with the 8-DFN package footprint during PCB layout. Review absolute maximum ratings carefully to prevent overstress during transient events.
Single FETs, MOSFETs Selection Notes
Select this component when a 100V rating is required alongside high efficiency in synchronous rectification or boost topologies. The low gate charge and fast switching times make it suitable for high-frequency applications. Consider the thermal management requirements based on the junction-to-ambient resistance if heatsinking is not utilized. Verify that the gate drive voltage aligns with the optimal RDS(ON) performance ranges.
Single FETs, MOSFETs Part Context
The AON6482 belongs to Alpha & Omega Semiconductor's portfolio of N-Channel MOSFETs designed for power management applications. It leverages trench technology to achieve superior conduction losses compared to standard planar devices. The device is packaged in a compact DFN5x6 form factor, facilitating surface-mount assembly in space-constrained designs common in modern electronic equipment.
Single FETs, MOSFETs Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. Consult manufacturer cross-reference guides for potential alternatives with matching voltage, current, and package specifications.
Single FETs, MOSFETs FAQ
Is the AON6482 rated for unclamped inductive switching?
Yes, the device has undergone 100% Unclamped Inductive Switching (UIS) testing to verify its capability to handle inductive load energy.
What is the maximum junction temperature for the AON6482?
The maximum junction temperature (TJ) and storage temperature range for the AON6482 is -55°C to 175°C.
How does the on-resistance vary with gate-source voltage?
The on-resistance is specified as less than 37mΩ at VGS=10V and less than 42mΩ at VGS=4.5V, indicating improved conduction at higher gate drive voltages.
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