AON6522

Single FETs, MOSFETs Overview

The AON6522 is an N-Channel MOSFET from Alpha & Omega Semiconductor, utilizing latest Trench Power AlphaMOS (αMOS LV) technology. It features a drain-source voltage (Vdss) of 25 V and a continuous drain current (Id) of 71 A at ambient temperature or 200 A at case temperature. The device operates within a junction temperature range of -55°C to 150°C. Key electrical parameters include very low RDS(on) at 4.5 V gate-source voltage and low gate charge. It is housed in an 8-DFN (5x6) surface-mount package with a maximum power dissipation of 7.3 W at ambient and 83 W at case conditions.

Single FETs, MOSFETs Feature Summary

• Utilizes latest Trench Power AlphaMOS (αMOS LV) technology for enhanced performance
• Provides very low on-resistance at 4.5 V gate-source voltage
• Features low gate charge for efficient switching
• Supports high current capability with robust thermal characteristics

Single FETs, MOSFETs Applications

• DC-DC converters
• Power management circuits
• Motor control applications

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix and packaging configuration required for your production line. Confirm that the component meets RoHS compliance standards as indicated by the manufacturer. Ensure that the 8-DFN (5x6) package dimensions align with your PCB footprint design. Check for any recent product change notifications regarding manufacturing site or material composition updates before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component when a 25 V N-Channel MOSFET with high current handling is required. The αMOS LV technology offers advantages in efficiency due to low RDS(on) and gate charge. Consider the 8-DFN package for space-constrained designs requiring surface mount assembly. Evaluate thermal management needs based on the specified power dissipation ratings at ambient and case temperatures.

Single FETs, MOSFETs Part Context

The AON6522 belongs to the AlphaMOS family from Alpha & Omega Semiconductor, designed for low-voltage power switching applications. It complements other devices in the series by offering optimized performance through trench technology. The 8-DFN package provides a compact solution suitable for modern electronic equipment requiring high density and reliability.

Single FETs, MOSFETs Replacement Considerations

Check datasheets for alternative N-Channel MOSFETs with similar 25 V rating and comparable current capabilities. Verify pinout compatibility and package dimensions if substituting directly. Ensure replacement parts meet the same thermal and electrical performance requirements for your specific application.