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AON6538 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is MOSFET N CH 30V 30A 8DFN. Review the specifications below when checking this part for your BOM.
The AON6538 is a single N-channel AlphaMOS power MOSFET manufactured by Alpha & Omega Semiconductor Inc. It utilizes the latest Trench Power AlphaMOS (αMOS LV) technology to achieve very low on-resistance and high current capability. The device features a Drain-Source Voltage (VDS) of 30V, a continuous Drain Current (ID) of 75A at VGS=10V, and a maximum On-Resistance (RDS(on)) of less than 4mΩ at VGS=10V. It operates within a junction temperature range of -55°C to 150°C.
Verify component authenticity through authorized distribution channels. Confirm that the specific order matches the AON6538 part number and package type. Ensure compliance with RoHS and Halogen-Free requirements if mandated by project specifications. Review datasheet thermal characteristics for proper board design integration.
Select this component for applications requiring high current handling up to 75A and low conduction losses. Consider the 30V rating and low RDS(on) values for efficient power management. Evaluate thermal dissipation requirements based on the specified junction-to-case and junction-to-ambient resistance values for the target operating environment.
This component belongs to the AlphaMOS family from Alpha & Omega Semiconductor Inc., designed for power management applications. It represents an advancement in trench MOSFET technology, focusing on reducing on-resistance while maintaining high current capabilities suitable for modern computing and industrial power supplies.
Consult official manufacturer documentation for verified substitute part numbers. Cross-reference electrical parameters such as VDS, ID, and RDS(on) to ensure compatibility. Verify package dimensions and pinout configurations before implementation.
The maximum continuous drain current is 75A when measured at VGS=10V.
Yes, the datasheet confirms that the device undergoes 100% UIS testing.
The total gate charge (Qg) at VGS=10V is typically 20.5nC, with a maximum of 30nC.
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