AON6810

Description：MOSFET 2N-CH 30V 25A 8DFN
Series：-

SKU:9a7271484602 Category: FET, MOSFET Arrays Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 30V 25A 8DFN
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual) Common Drain
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：25A
Rds On (Max) @ Id, Vgs：4.4mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：34nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：1720pF @ 15V
Power - Max：4.1W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SMD, Flat Leads Exposed Pad
Supplier Device Package：8-DFN-EP (5x6)
Grade：-
Qualification：-

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AON6810

Overview

The AON6810 is a dual N-channel enhancement mode MOSFET array utilizing AlphaMOS trench technology. It features a 30V drain-source voltage and a continuous drain current of 20A at VGS=10V. The device offers very low on-resistance, specified as less than 4.4mΩ at VGS=10V and less than 6.5mΩ at VGS=4.5V. Total gate charge is typically 34nC at 10V and 20nC at 4.5V. Input capacitance is 1720pF at 15V. The component includes an integrated temperature sense diode and provides ESD protection rated at HBM Class 3A. It operates within a junction temperature range of -55°C to 150°C.

Feature Summary

Dual common-drain configuration with integrated temperature sense diode
Very low RDS(ON) optimized for 4.5V logic-level gate drive
Advanced trench technology providing low gate charge
ESD protection compliant with HBM Class 3A standards

Applications

Battery management systems
Load switching applications
PWM control circuits

Procurement Notes

Verify the specific package marking and date code against the manufacturer's latest datasheet revision before integration. Confirm that the intended application environment remains within the consumer market scope, as critical life support uses are explicitly excluded from qualification. Ensure thermal design accounts for the specified junction-to-ambient resistance values under actual board copper constraints.

Selection Notes

Select this component when a dual N-channel solution with a shared source terminal is required in a compact footprint. The low gate threshold and high current capability make it suitable for direct microcontroller driving. Evaluate the thermal performance based on the specific PCB copper area, as the junction-to-ambient resistance varies significantly with board layout dimensions.

Part Context

This part belongs to the AlphaMOS LV series from Alpha & Omega Semiconductor Inc., designed for low-voltage power switching. It utilizes advanced trench technology to achieve superior conduction losses compared to standard planar devices. The dual common-drain architecture allows for efficient space utilization in portable electronics and battery-powered equipment requiring synchronized switching functions.