AON6928

Overview

The AON6928 is a dual asymmetric N-channel MOSFET utilizing AlphaMOS LV technology, housed in a DFN5X6 package. It integrates two distinct channels with differing current and resistance capabilities. Channel Q1 provides a continuous drain current of 30A at VGS=10V with an on-resistance below 8.2mΩ. Channel Q2 delivers 36A at VGS=10V with an on-resistance under 2.9mΩ. Both channels maintain a 30V drain-source breakdown voltage. The device features low gate charge and high current capability, suitable for power switching applications.

Feature Summary

• Dual asymmetric configuration combining two N-channel MOSFETs with optimized electrical characteristics for different load requirements within a single compact package.
• Utilizes latest Trench Power AlphaMOS (αMOS LV) technology to achieve very low on-resistance at a 4.5V gate drive voltage.
• Includes 100% UIS (Unclamped Inductive Switching) testing and 100% Rg (Gate Resistance) testing to ensure reliability and consistency.

Applications

• DC/DC converters in computing and server environments
• Point-of-load (POL) regulation circuits
• Isolated DC/DC converters in telecom and industrial systems

Procurement Notes

Verify the specific ordering suffix and tape/reel quantity requirements directly with the manufacturer or authorized distributors before placing orders. Confirm that the component meets RoHS and Halogen-Free compliance standards required by your assembly process. Ensure the design accommodates the DFN5X6 package thermal constraints and soldering profiles specified in the datasheet.

Selection Notes

Select this component when a dual asymmetric layout is required to optimize board space and performance for mixed-load scenarios. Consider the lower on-resistance of Q2 for higher current paths and Q1 for standard switching duties. Evaluate the thermal dissipation capabilities based on the specific PCB copper area and airflow conditions, as the junction-to-ambient resistance varies significantly with board design.

Part Context

This component belongs to the Alpha & Omega Semiconductor dual MOSFET portfolio, specifically designed for low-voltage, high-current applications. It leverages the αMOS LV platform to enhance efficiency in modern power management systems where low gate drive voltages are prevalent. The DFN5X6 package offers a balance between thermal performance and footprint reduction compared to traditional leaded packages.

Replacement Considerations

No direct public substitute part numbers are documented for the AON6928. Designers must evaluate alternative dual asymmetric MOSFETs from other manufacturers based on pin compatibility, electrical parameters, and thermal characteristics if substitution is necessary.

FAQ

What is the difference between Channel Q1 and Channel Q2?

Channel Q2 is optimized for higher current handling (36A vs 30A) and lower on-resistance (<2.9mΩ vs <8.2mΩ) compared to Channel Q1, making it suitable for heavier loads while Q1 serves standard switching functions.

Does the AON6928 support low-side driving at 4.5V?

Yes, the device utilizes αMOS LV technology to achieve very low RDS(on) at a VGS of 4.5V, ensuring efficient operation with lower gate drive voltages.

What packaging does the AON6928 use?

The AON6928 is packaged in a DFN5X6 (5x6mm Dual Flat No-Lead) surface-mount package.