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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 22A/30A 8DFN
- Series：-
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual) Asymmetrical
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：22A, 30A
- Rds On (Max) @ Id, Vgs：5.2mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：22nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：1037pF @ 15V
- Power - Max：3.6W, 4.3W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerVDFN
- Supplier Device Package：8-DFN (5x6)
- Grade：-
- Qualification：-
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Overview
The AON6934 is a dual asymmetric N-Channel AlphaMOS power transistor in a DFN5X6 package. It features two independent channels with distinct electrical characteristics. Q1 provides a maximum drain current of 28A at VGS=10V and an on-resistance below 5.2mΩ. Q2 offers higher performance with a maximum drain current of 36A and on-resistance under 2.8mΩ at the same gate voltage. Both channels operate with a 30V drain-source breakdown voltage and ±20V gate-source rating. The device utilizes latest Trench Power AlphaMOS technology for low gate charge and high current capability, suitable for DC/DC converters.
Feature Summary
- Dual asymmetric configuration with optimized channel separation
- Latest Trench Power AlphaMOS LV technology implementation
- Very low on-resistance at 4.5V gate-source voltage
- High current capability with 100% UIS and Rg testing
Applications
- DC/DC Converters in Computing
- Point-of-Load (POL) Applications in Servers
- Isolated DC/DC Converters in Telecom Systems
- Industrial Power Supply Modules
Procurement Notes
Verify component authenticity through authorized distribution channels. Confirm datasheet revision matches design requirements. Check RoHS and halogen-free compliance status for environmental regulations. Validate thermal management design against junction-to-ambient resistance values provided in official documentation.
Selection Notes
Select based on specific channel requirements due to asymmetric design. Use Q1 for standard switching applications requiring 28A continuous current. Choose Q2 for higher current demands up to 36A or lower on-resistance needs. Ensure gate drive voltage supports the 4.5V operation mode for optimal efficiency. Consider thermal dissipation limits when operating near maximum ratings.
Part Context
This component belongs to the AlphaMOS family from Alpha & Omega Semiconductor Inc., utilizing advanced trench MOSFET technology. It is designed as a dual asymmetric solution, combining two different N-channel transistors in a single compact DFN5X6 package. This integration reduces board space while providing flexible current handling options for various power stages.
Replacement Considerations
Direct pin-compatible replacements are not explicitly listed in the provided datasheet. Evaluate similar dual asymmetric N-Channel MOSFETs from Alpha & Omega Semiconductor with matching DFN5X6 packaging and comparable 30V ratings. Verify electrical parameters closely match original specifications before substitution.
