ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 22A/40A 8DFN
- Series：-
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual) Asymmetrical
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：22A, 40A
- Rds On (Max) @ Id, Vgs：4.9mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：24nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：984pF @ 15V
- Power - Max：3.6W, 4.3W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerVDFN
- Supplier Device Package：8-DFN (5x6)
- Grade：-
- Qualification：-
Download product information
Overview
The AON6936 is a dual asymmetric N-channel MOSFET from Alpha & Omega Semiconductor, utilizing AlphaMOS technology. It features two distinct channels within an 8-DFN (5x6mm) package. Q1 provides 32A continuous drain current with RDS(ON) below 4.9mΩ at VGS=10V and 8.4mΩ at VGS=4.5V. Q2 delivers 44A continuous drain current with RDS(ON) below 2mΩ at VGS=10V and 2.8mΩ at VGS=4.5V. Both channels support a 30V drain-source voltage and operate up to 150°C junction temperature.
Feature Summary
- Dual asymmetric configuration with optimized low on-resistance for high-current applications
- Advanced Trench Power AlphaMOS LV technology enabling very low RDS(on) at 4.5V gate drive
- High current capability with 100% UIS and Rg testing for enhanced reliability
Applications
- DC/DC converters in computing and server power supplies
- Point-of-load (POL) regulation circuits
- Isolated DC/DC converters in telecom and industrial systems
Procurement Notes
Verify the specific datasheet revision and manufacturing lot details upon order confirmation. Confirm compliance with RoHS and Halogen-Free standards as stated in the official documentation. Ensure the ordering suffix matches the required tape and reel or cut tape format for your assembly line.
Selection Notes
Select this component when designing asymmetric bridge or half-bridge topologies requiring different current ratings for high-side and low-side switches. The low RDS(on) at 4.5V makes it suitable for logic-level driving in modern controller environments without additional gate drivers.
Part Context
This part belongs to the AlphaMOS family of power semiconductors designed for efficiency and thermal performance. It is specifically engineered for compact power stages where space constraints and high current density are critical design factors in consumer and industrial electronics.
Replacement Considerations
Check pinout compatibility and thermal resistance values when substituting. Verify that alternative parts meet the 30V rating and provide comparable RDS(on) specifications at both 10V and 4.5V gate voltages to maintain circuit efficiency.
